Related papers: Charge and temporal characterisation of silicon se…

The timing performance of the Timepix4 application-specific integrated circuit (ASIC) bump-bonded to a $100\;\mu\textrm{m}$ thick n-on-p silicon sensor is presented. A picosecond pulsed infrared laser was used to generate electron-hole…

Two-photon absorption (TPA) enables three-dimensional characterisation of silicon detectors by generating charge carriers within a confined volume around a focused laser spot. In combination with pixelated readout systems, TPA measurements…

The Two-Photon Absorption (TPA) process provides an excellent method for the characterisation of solid-state sensors due to its intrinsic 3D resolution for the excitation of electron-hole pairs. This paper presents the commissioning of a…

We derive expressions for the time resolution of silicon detectors, using the Landau theory and a PAI model for describing the charge deposit of high energy particles. First we use the centroid time of the induced signal and derive analytic…

In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average…

A prototype particle tracking telescope has been constructed using Timepix and Medipix ASIC hybrid pixel assemblies as the six sensing planes. Each telescope plane consisted of one 1.4 cm2 assembly, providing a 256x256 array of 55 micron…

The design of a detector system comprised of four silicon sensors bump-bonded to Timepix4 ASICs is described together with its data acquisition system, operational infrastructure, and dedicated software. The spatial and temporal performance…

Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interface by a focussed sub-nanosecond laser with a wavelength of…

Three-dimensional (3D) pixel sensors are a promising technology for implementing the 4D-tracking paradigm in high-radiation environments. Despite their advantages in radiation tolerance, 3D pixel sensors exhibit non-uniform electric and…

This paper describes the fundamental timing properties of a single-pixel sensor for charged particle detection based on the 3D-trench silicon structure. We derive the results both analytically and numerically by considering a simple ideal…

In this paper the efficiency of direct charged particle detection with different Silicon PhotoMultiplier (SiPM) sensors has been measured to be close to 100%. Time resolution of about 20 ps has also been confirmed for sensors with an active…

The RD50-MPW4, a Depleted Monolithic Active Pixel Sensor (DMAPS) was analyzed using a Two Photon Absortion Transient Current Technique (TPA-TCT). This technique provides sensitivity maps with micrometer-scale spatial resolution, enabling…

The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to $8 \times 10^{15} 1 \mathrm{\,Me\kern -0.1em V} \mathrm{ \,n_{eq}} {\mathrm{ \,cm}}^{-2}$. The…

The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transient current technique with sub-nanosecond focused light pulses…

The Two Photon Absorption - Transient Current Technique (TPA-TCT) was used to investigate a silicon strip detector with illumination from the top. Measurement and analysis techniques for the TPA-TCT of segmented devices are presented and…

Timepix3 is a multi-purpose readout ASIC for hybrid pixel detectors. It can measure time and energy simultaneously by employing time-of-arrival (ToA) and time-over-threshold (ToT) techniques. Both methods are systematically affected by…

This paper presents the detailed simulation of a double-pixel structure for charged particle detection based on the 3D-trench silicon sensor developed for the TIMESPOT project and a comparison of the simulation results with measurements…

Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…

SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of…

The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout…