Related papers: Giant optical oscillator strengths in perturbed he…
The Abbe diffraction limit, tied to the fundamental spatial bandwidth constraint imposed by any physical aperture, remains the primary barrier to achieving ultimate far-field optical resolution and precise light-matter interactions.…
Various bandstructure engineering methods have been studied to improve the performance of graphitic transparent conductors; however none demonstrated an increase of optical transmittance in the visible range. Here we measure in situ optical…
Silicon is the most popular material used in electronic devices. However, its poor optical properties owing to its indirect band gap nature limit its usage in optoelectronic devices. Here we present the discovery of super-stable…
Disorder-induced ordering and unprecedentedly high radiation tolerance in $\gamma$-phase of gallium oxide is a recent spectacular discovery at the intersection of the fundamental physics and electronic applications. Importantly, by far,…
Gallium oxide is an ultra-wide bandgap semiconductor with exceptional properties for power electronics and UV-C optoelectronics, but its behavior under illumination remains poorly understood. In this work, we investigate how optically…
An ideal superradiant laser on an optical clock transition of noninteracting cold atoms is predicted to exhibit an extreme frequency stability and accuracy far below mHz-linewidth. In any concrete setup sufficiently many atoms have to be…
Conduction and valence band states for the highly mismatched alloy (HMA) Ge:C are projected onto Ge crystal states, Ge vacancy states, and Ge/C atomic orbitals, revealing that substitutional carbon not only creates a direct bandgap, but the…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
Crystal defects, traditionally viewed as detrimental, are now being explored for quantum technology applications. This study focuses on stacking faults in silicon and germanium, forming hexagonal inclusions within the cubic crystal and…
Hexagonal diamond has been predicted computationally to display extraordinary physical properties including a hardness that exceeds cubic diamond. However, a recent electron microscopy study has shown that so-called hexagonal diamond…
Despite their electronic dominance, cubic diamond structured Si and Ge, are optoelectronically deficient. Recent work indicates, however, that a volume-expanded hexagonal Ge modification can exhibit intensely sought, superior optoelectronic…
Germanium self-assembled nanoislands and quantum dots are very prospective for CMOS-compatible optoelectronic integrated circuits but their luminescence intensity is still insufficient for many practical applications. Here, we demonstrate…
Elucidating the interplay between nuclear and electronic degrees of freedom that govern the complex dielectric behavior of materials under intense photoexcitation is essential for tailoring optical properties on demand. However,…
We address the fabrication of nano-architectures by impacting thin layers of amorphous Ge deposited on SiO$_{2}$ with a Ga$^{+}$ ion beam and investigate the structural and optical properties of the resulting patterns. By adjusting beam…
We study Landau-Zener interband transitions for a non-symmetric optical lattice in the presence of an external force. We show that gain and losses of the light beam, as well as the relative occupation probabilities of the bands involved in…
In semiconducting solar-cell absorbers, high absorption coefficient (alpha) near the band-edge region is critical to maximize the photocurrent generation and collection. Nevertheless, despite the importance of the band-edge absorption…
Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the $GW$ approximation within the framework of the FLAPW method, we study the…
Germanium (Ge) has emerged as a contender for scalable solid-state spin qubits. This interest stems from the numerous attractive properties of hole spin in Ge low-dimensional systems and their compatibility with the standards of silicon…
Two-dimensional group-VI transition metal dichalcogenide semiconductors, such as MoS2, WSe2 and others, exhibit strong light-matter coupling and possess direct band gaps in the infrared and visible spectral regimes, making them potentially…
We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$…