Related papers: Pressure Sensor with New Electrical Circuit Utiliz…
To extend the Moores law in the 5 nm node, a large number of two dimensional (2D) materials and devices have been thoroughly researched, among which the cold metals 2H MS2 (M = Nb, Ta) with unique band structures are expected to achieve the…
The use of high-quality factor resonators is of undoubted interest for high-precision measurements and for applications in quantum technologies. Novel types of microwave sensors can be realized by coupling a first resonator acting as a…
Transition-Edge Sensors (TESs) are two-dimensional superconducting films used to detect energy or power. TESs are voltage biased in the resistive transition where the film resistance is both finite and a strong function of temperature.…
To elucidate the pressure evolution of the electronic structure in an antiferromagnetic dimer-Mott (DM) insulator ${\beta}^{\prime}$-(BEDT-TTF)$_2$ICl$_2$, which exhibits superconductivity at 14.2 K under 8 GPa, we measured the polarized…
In assessing piezoresistive microcantilever sensitivity for surface stress sensing, the key is its capacity to translate surface stress into changes in resistance. This change hinges on the interplay between stresses and piezoresistivity.…
We show that the sensitivity of antenna-coupled field-effect transistors (FETs) to terahertz (THz) radiation improves continuously with decreasing temperature. The noise-equivalent power (NEP) of 540 GHz patch-antenna-coupled FETs decreases…
Solid state magnetic field sensors based on magneto-resistance modulation find direct applications in communication devices, specifically in proximity detection, rotational reference detection and current sensing. In this work, we propose…
Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the…
We have developed a new micro-fabricated platform for the measurement of the specific heat of low heat capacity mg-sized metallic samples, such as superconductors, down to temperatures of as low as $10\,\mathrm{mK}$. It addresses…
The hydrostatic pressure effect on the newly discovered superconductor MgB2 has been determined. The transition temperature Tc was found to decrease linearly at a large rate of -1.6 K/GPa, in good quantitative agreement with the ensuing…
The micro-electromechanical-system (MEMS) force and acceleration sensor utilizing the graphene-induced non-radiative transition was investigated. The graphene-induced non-radiative transition is very sensitive to the distance, and the…
We present measurements of superconducting transition temperature, resistivity, magnetoresistivity and temperature dependence of the upper critical field of Ta$_4$Pd$_3$Te$_{16}$ under pressures up to 16.4 kbar. All measured properties have…
The development of compact and tunable room temperature sources of coherent THz-frequency signals would open a way for numerous new applications. The existing approaches to THz-frequency generation based on superconductor Josephson…
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric…
A Pulse-Compression Probing (PCP) method is applied in time-domain to identify an equivalent circuit model of a distribution network as seen from the transmission grid. A Pseudo-Random Binary Pulse Train (PRBPT) is injected as a voltage…
We present a candidate sensor for future spectroscopic applications, such as a Stage-5 Spectroscopic Survey Experiment or the Habitable Worlds Observatory. This type of charge-coupled device (CCD) sensor features multiple in-line amplifiers…
Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $\delta$-layers, fabricated by gas-phase…
High linear voltage references circuitry are designed and implemented in TSMC 0.18$\mu$m CMOS technology. Previous research has proposed the use of MOS transistors operating in the weak inversion region to replace the bipolar devices in…
Layered magnetic transition-metal thiophosphate NiPS3 has unique two-dimensional (2D) magnetic properties and electronic behavior. The electronic band structure and corresponding magnetic state are expected to sensitive to the interlayer…
A sensor that integrates high sensitivity micro-Hall effect magnetometry and high-frequency electron paramagnetic resonance spectroscopy capabilities on a single semiconductor chip is presented. The Hall-effect magnetometer was fabricated…