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Numerical Simulations are employed to create amorphous nano-films of a chosen thickness on a crystalline substrate which induces strain on the film. The films are grown by a vapor deposition technique which was recently developed to create…

Mechanical shear deformations lead, in some cases, to effects similar to those resulting from ion irradiation. Here we characterize the effects of shear velocity and temperature on amorphous silicon (\aSi) modelled using classical molecular…

Materials Science · Physics 2015-05-19 Ali Kerrache , Normand Mousseau , Laurent J. Lewis

Hydrogenated amorphous silicon alloy films are generally deposited by radio frequency plasma enhanced chemical vapor deposition (RF PECVD) technique on various types of substrates. Generally it is assumed that film quality remains unchanged…

Materials Science · Physics 2024-05-13 S. M. Iftiquar , S. N. Riaz , S. Mahapatra

Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge…

Materials Science · Physics 2009-02-11 A. Csik , M. Serenyi , Z. Erdelyi , A. Nemcsics , C. Cserhati , G. A. Langer , D. L. Beke , C. Frigeri , A. Simon

Adsorbed molecular films provide two-dimensional systems that show various emergent phenomena that are not observed in bulk counterparts. We have measured the elasticity of thin neon films adsorbed on porous glass down to 1 K by the…

Strongly Correlated Electrons · Physics 2019-08-20 Takahiko Makiuchi , Katsuyuki Yamashita , Michihiro Tagai , Yusuke Nago , Keiya Shirahama

Pulsed laser deposition from a Nd:YAG laser was employed in production of hundreds of nanometer thick quasicrystalline Ti-Zr-Ni films on glass substrate. The influence of deposition temperature Ts on the structure, morphology and…

Materials Science · Physics 2020-10-26 Valerie Brien , A. Dauscher , P. Weisbecker , J. Ghanbaja , F Machizaud

The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen…

Materials Science · Physics 2007-05-23 A. Barhdadi , M. Chafik El Idrissi

The combination of large thickness ($>3$ $\mu$m), large--area uniformity (75 mm diameter), high growth rate (up to 0.4 $\mu$m/min) in assemblies of complex--shaped nanowires on lithographically defined patterns has been achieved for the…

Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in…

We have investigated dielectric losses in amorphous SiO thin films under operating conditions of superconducting qubits (mK temperatures and low microwave powers). For this purpose, we have developed a broadband measurement setup employing…

Superconductivity · Physics 2014-07-04 S. T. Skacel , Ch. Kaiser , S. Wuensch , H. Rotzinger , A. Lukashenko , M. Jerger , G. Weiss , M. Siegel , A. V. Ustinov

We study the effects of time-dependent substrate/film temperature in the deposition of a mesoscopically thick film using a statistical model that accounts for diffusion of adatoms without lateral neighbors whose coefficients depend on an…

Statistical Mechanics · Physics 2013-10-30 T. A. de Assis , F. D. A. A. Reis

The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si$_3$N$_4$/SiO$_2$/Si(001) substrates are presented. Noticeable changes of the…

We study the three-dimensional structure formation when atoms are deposited onto a substrate with a decagonal quasicrystalline order. Molecular-dynamicscalculations show that the adsorbate layer consists of ordered nano-scale domains with…

Materials Science · Physics 2007-11-29 Muhittin Mungan , Yves Weisskopf , Mehmet Erbudak

Atomic layer deposition was used to synthesize niobium silicide (NbSi) films with a 1:1 stoichiometry, using NbF5 and Si2H6 as precursors. The growth mechanism at 200oC was examined by in-situ quartz crystal microbalance (QCM) and…

The stability of interfaces and the mechanisms of thin film growth on semiconductors are issues of central importance in electronic devices. These issues can only be understood through detailed study of the relevant microscopic processes.…

mtrl-th · Physics 2016-09-07 Efthimios Kaxiras

We study the optical and electrical properties of silver films with a graded thickness obtained through metallic evaporation in vacuum on a tilted substrate to evaluate their use as semitransparent electrical contacts. We measure their…

Tunneling two-level systems (TLSs), generic to amorphous solids, dictate the low-temperature properties of amorphous solids and dominate noise and decoherence in quantum nano-devices. The properties of the TLSs are generally described by…

Disordered Systems and Neural Networks · Physics 2021-02-25 Alexander Churkin , Shlomi Matityahu , Andrii O. Maksymov , Alexander L. Burin , Moshe Schechter

We use molecular dynamics computer simulations to study the equilibrium properties of the surface of amorphous silica. Two types of geometries are investigated: i) clusters with different diameters (13.5\AA, 19\AA, and 26.5\AA) and ii) a…

Statistical Mechanics · Physics 2009-10-31 Alexandra Roder , Walter Kob , Kurt Binder

Different peak trends of tiny grains carbon film have been observed under the investigations of Raman spectroscopy and energy loss spectroscopy. Carbon films known in nanocrystalline and ultra-nanocrystalline diamond films are synthesized…

Materials Science · Physics 2019-10-31 Mubarak Ali , I-Nan Lin

Advancements in modern semiconductor devices increasingly depend on the utilization of amorphous materials and the reduction of material thickness, pushing the boundaries of their physical capabilities. The mechanical properties of these…

Applied Physics · Physics 2024-05-31 C. Pashartis , M. J. van Setten , M. Houssa , G. Pourtois