Related papers: The Selena Neutrino Experiment
On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…
Selenium is an elemental semiconductor with a wide bandgap suitable for a range of optoelectronic and solar energy conversion technologies. However, developing such applications requires an in-depth understanding of the fundamental material…
The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation…
Silicon pixel detectors produced according to the ATLAS Pixel Detector design were tested in a beam at CERN in the framework of the ATLAS collaboration. The detectors used n+/n sensors with oxygenated silicon substrates. The experimental…
Absolute cross sections for the {\it K}-shell photoionization of Be-like and Li-like atomic nitrogen ions were measured by employing the ion-photon merged-beam technique at the SOLEIL synchrotron radiation facility in Saint-Aubin, France.…
Recent development on Ge$_{1-x}$Sn$_x$ nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at nanoscale. Herein, we report a chemical vapour…
We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a…
Selenium has attracted intensive attention as a promising material candidate for future optoelectronic applications. However, selenium has a strong tendency to grow into nanowire forms due to its anisotropic atomic structure, which has…
The primary goal of the novel photosensor technology called ABALONETM (U.S. Pat. 9,064,678) has been to enable the next-generation of astroparticle physics experiments to open new windows on the universe with large-area detectors of…
We explore the possibility to use advanced germanium (Ge) detectors as a low-energy solar neutrino observatory by means of neutrino-nucleus elastic scattering. A Ge detector utilizing internal charge amplification for the charge carriers…
Selene is the attempt to implement a new scheme for high-intensity specular reflectometry. Instead of a highly collimated beam one uses a convergent beam covering a large angular range. The angular resolution is then performed by a…
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator…
Characteristics of neutrino absorption by $^{82}$Se nucleus reaction -- low threshold value, high absorption cross section of neutrinos, emitted by artificial sources, make selenium-82 perspective object to search for new neutrino species…
A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicon tracker for the Circular Electron-Positron Collider (CEPC) project. The sensor, consisted of nine sectors varying in pixel sizes, diode sizes and geometries, is…
A gaseous beam monitor utilizing gas electron multiplier (GEM) and pixel sensors is being developed for the Cooling Storage Ring (CSR) External-target Experiment (CEE) at Heavy Ion Research Facility in Lanzhou (HIRFL). The beam monitor is…
Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…
We investigate the performance of large area radiation detectors, with high energy- and spatial-resolution, intended for the development of a Total Energy Detector with gamma-ray imaging capability, so-called i-TED. This new development…
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active…
Neutron imaging is an invaluable noninvasive technique for exploring new science and assisting industrial manufacture. However, state-of-the-art neutron facilities are extremely expensive and inconvenient to access, while the flux of…
We report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35um CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly…