Related papers: Radiation hardness study using SiPMs with single-c…
The proven radiation hardness of silicon 3D devices up to fluences of $1 {\times} 10^{17}$ $n_{eq}/cm^{2}$ makes them an excellent choice for next generation trackers, providing < 10 ${\mu}m$ position resolution at a high multiplicity…
Measured response functions and low photon yield spectra of silicon photomultipliers (SiPM) were compared to multi-photoelectron pulse-height distributions generated by a Monte Carlo model. Characteristic parameters for SiPM were derived.…
The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of MPPCs from Hamamatsu were exposed to gamma rays and neutrons at the…
Silicon photomultipliers (SiPMs) have become popular light conversion devices in recent years due to their low bias voltage and sensitivity to wavelengths emitted from common scintillating materials. These properties make them particularly…
Limited radiation hardness is the primary drawback to implementing Silicon Photomultipliers (SiPMs) in high-luminosity environments, such as the Compressed Baryonic Matter (CBM) experiment. Hadron irradiation generates defects in the…
Silicon Photomultipliers (SiPMs) are single photon detectors that gained increasing interest in many applications as an alternative to photomultiplier tubes. In particular in the field of space experiments, where volume, weight and power…
In the context of the Scintillating Fibre (SciFi) Tracker for the LHCb Upgrade 2, radiation-induced damage in silicon photomultipliers (SiPMs) has been studied over a wide temperature range, from room temperature down to 100 K. With the…
Pixel detectors are used in the innermost part of the multi purpose experiments at LHC and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The…
The gain of silicon photomultipliers (SiPMs) increases with bias voltage and decreases with temperature. To operate SiPMs at stable gain, the bias voltage can be adjusted to compensate temperature changes. We have tested this concept with…
A new method to determine the breakdown voltage of SiPMs is presented. It is backed up by a DC model which describes the breakdown phenomenon by distinct avalanche turn-on ($V_{01}$) and turn off ($V_{10}$) voltages. It is shown that…
This paper discusses the effects of radiation damage to SiPMs on the performances of plastic scintillator counters with series-connected SiPM readout, focusing on timing measurements. The performances of a counter composed of a $120 \times…
The characterisation of radiation-damaged SiPMs is a major challenge, when the average time between dark counts approaches, or even exceeds, the signal decay time. In this note a collection of formulae is presented, which have been…
The damage growth and surface modifications in Si(100), induced by 25 keV Si$_5^-$ cluster ions, as a function of fluence, $\phi$, has been studied using atomic force microscopy (AFM) and channeling Rutherford backscattering spectrometry…
We investigate the radiation tolerance of p-type silicon pad sensors, indigenously developed for use in high-fluence environments relevant to heavy-ion collider experiments, cosmic-ray observatories, and deep-space missions. Single-pad test…
The radiation damage to a silicon photomultiplier (SiPM) set on a satellite orbit increases energy threshold for scintillator detectors. We confirmed that 1 krad of radiation increases the energy threshold by approximately a factor of 10,…
Silicon photomultipliers (SiPMs) will be used to read out all calorimeters in the ePIC experiment at the Electron-Ion Collider (EIC). A thorough characterization of the radiation damage expected for SiPMs under anticipated EIC fluences is…
Here we report the results of an investigation into the effects of ionizing radiation on commercial-off-the-shelf InGaAs and Si photodiodes. The photodiodes were exposed to 30, 52, and 98 MeV protons with fluences ranging from 10^8 -…
This paper presents the results of the fast neutron irradiation (E$_n$ > 0.5MeV) of an EJ-276 scintillator performed in the MARIA research reactor with fluence up to 5.3$\times$10$^{15}$ particles/cm$^2$. In our work, four samples with size…
The gain of silicon photomultipliers (SiPMs) increases with bias voltage and decreases with temperature. To operate SiPMs at stable gain, the bias voltage can be readjusted to compensate for temperature changes. We have tested this concept…
In this work we study the performance of silicon photomultiplier (SiPM) light sensors after exposure to the JULIC cyclotron proton beam, of energy $\sim$ 39 MeV, relative to their performance before exposure. The SiPM devices used in this…