Related papers: Quantum emitter formation in carbon-doped monolaye…
Solid-state single-photon emitters (SPE) are a basis for emerging technologies such as quantum communication and quantum sensing. SPE based on fluorescent point defects are ubiquitous in semiconductors and insulators, and new systems with…
Quantum photonics technologies require a scalable approach for integration of non-classical light sources with photonic resonators to achieve strong light confinement and enhancement of quantum light emission. Point defects from hexagonal…
Two dimensional van der Waals crystals and their heterostructures provide an exciting alternative to bulk wide bandgap semiconductors as hosts of single photon emitters. Amongst different layered materials, bright and robust defect-based…
Boron vacancy centre ($V_{\rm B}^-$) ensembles in hexagonal boron nitride (hBN) have attracted recent interest for their potential as two-dimensional solid-state quantum sensors. Irradiation is necessary for $V_{\rm B}^-$ creation, however,…
Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room…
Single photon emitters in atomically-thin semiconductors can be deterministically positioned using strain induced by underlying nano-structures. Here, we couple monolayer WSe$_2$ to high-refractive-index gallium phosphide dielectric…
Two-dimensional (2D) materials have emerged as promising candidates for next-generation integrated single-photon emitters (SPEs). However, significant variability in the emission energies of 2D SPEs presents a major challenge in producing…
Defect-based quantum emitters in solid state materials offer a promising platform for quantum communication and sensing. Confocal fluorescence microscopy techniques have revealed quantum emitters in a multitude of host materials. In some…
Nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1, 2). However, quantum emitters in monolayer TMDCs are typically unstable in ambient…
Room-temperature single-photon emission (SPE) resulting from a biexciton-exciton cascaded decay is demonstrated for the first time from chemically and photoelectrochemically etched site-controlled In0.14Ga0.86N quantum dots (QDs) embedded…
B-centres in hexagonal boron nitride (hBN) are gaining significant research interest for quantum photonics applications due to precise emitter positioning and highly reproducible emission wavelengths. Here, we leverage the layered nature of…
Integrated quantum photonics, with potential applications in quantum information processing, relies on the integration of quantum emitters into on-chip photonic circuits. Hexagonal boron nitride (hBN) is recognized as a material that is…
The generation of single-photon emitters in hexagonal boron nitride around 2 eV emission is experimentally well-recognized; however the atomic nature of these emitters is unknown. In this paper, we use first-principles calculations to…
Hexagonal boron nitride (hBN) is a wide band gap material with both strong excitonic light emission in the ultraviolet and strong exciton-phonon coupling. Luminescence experiments performed on the recently synthesized monolayer form (m-hBN)…
Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer size grains with a preferred orientation of 30 degrees…
Quantum emitters in hexagonal Boron Nitride (hBN) were recently reported to hol a homogeneous linewidth according to the Fourier-Transform limit up to room temperature. This unusual observation was traced back to decoupling from in-plane…
Recently discovered quantum emitters in two-dimensional (2D) materials have opened new perspectives of integrated photonic devices for quantum information. Most of these applications require the emitted photons to be indistinguishable,…
Among a variety of layered materials used as building blocks in van der Waals heterostructures, hexagonal boron nitride (hBN) appears as an ideal platform for hosting optically-active defects owing to its large bandgap ($\sim 6$ eV). Here…
We propose and design photonic crystal cavities (PCCs) in hexagonal boron nitride (hBN) for diverse photonic and quantum applications. Two dimensional (2D) hBN flakes contain quantum emitters which are ultra-bright and photostable at room…
The potential of solid-state quantum emitters for applications critically depends on several key figures of merit. One of the most important is the quantum coherence of the emitted single photons, which can be compromised by fast dephasing…