Related papers: Universal Non-Volatile Resistive Switching Behavio…
Two-dimensional (2D) materials present an exciting opportunity for devices and systems beyond the von Neumann computing architecture paradigm due to their diversity of electronic structure, physical properties, and atomically-thin, van der…
Previously, we demonstrated hysteretic and persistent changes of resistivity in two-terminal electronic devices based on charge trapping and detrapping at immobile metastable defects [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys.…
Nonvolatile resistive-switching (RS) memories promise to revolutionize hardware architectures with in-memory computing. Recently, ion-interclation materials have attracted increasing attention as potential RS materials for their…
Non-Volatile Random Access Memory (NVRAM) is a novel type of hardware that combines the benefits of traditional persistent memory (persistency of data over hardware failures) and DRAM (fast random access). In this work, we describe an…
High-performance non-volatile resistive random access memories (ReRAM) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emergent Internet of Things (IOT) arena. Here, we…
Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications…
Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable synthesis and characterization of these materials must be…
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) can withstand a large deformation without fracture or inelastic relaxation, making them attractive for application in novel strain-engineered and flexible…
Two-dimensional (2D) materials have become a fertile playground for the exploration and manipulation of novel collective electronic states. Recent experiments have unveiled a variety of robust 2D orders in highly-crystalline materials…
Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit…
Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enables low power consumption, making them promising candidates…
Electrical switching and rectifying properties of the metal-VO2-Si structures, on both p-type and n-type silicon, with vanadium dioxide films obtained by an acetylacetonate sol-gel method, are studied. The switching effect is shown to be…
VS2 and VSe2 have attracted particular attention among the transition metals dichalcogenides because of their promising physical properties concerning magnetic ordering, charge density wave (CDW), emergent superconductivity, etc., which are…
At the end of Silicon roadmap, keeping the leakage power in tolerable limit and bridging the bandwidth gap between processor and memory have become some of the biggest challenges. Several promising Non-Volatile Memories (NVMs) such as,…
The ramp reversal memory (RRM) is a non-volatile memory effect previously observed in correlated oxides exhibiting temperature-driven metal-insulator transitions (MITs). In essence, when a system displaying RRM is heated to a specific…
Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage…
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…
The scaling limitations of conventional transistors demand alternative device concepts capable of dynamic reconfigurability at the atomic scale. Resistive switching (RS), a key mechanism for neuromorphic computing and non-volatile memory,…
PrMnO$_3$ (PMO) based RRAM shows selector-less behavior due to high-non-linearity. Recently, the non-linearity, along with volatile hysteresis, is demonstrated and utilized as a compact oscillator to enable highly scaled oscillatory…
In this study, we design a reservoir computing (RC) network by exploiting short- and long-term memory dynamics in Au/Ti/MoS$_2$/Au memristive devices. The temporal dynamics is engineered by controlling the thickness of the Chemical Vapor…