Related papers: Universal Non-Volatile Resistive Switching Behavio…
This study demonstrates multilevel switching at 1.5 K of Al2O3/TiO2-x resistive memory devices fabricated with CMOS-compatible processes and materials. The I-V characteristics exhibit a negative differential resistance (NDR) effect due to a…
Interest in the bulk transition metal dichalcogenides for their electronic, photovoltaic, and optical properties has grown and led to their use in many technological applications. We present a systematic investigation of their interlinked…
Non-volatile memory (NVM) technologies such as spin-transfer torque magnetic random access memory (STT-MRAM) and spin-orbit torque magnetic random access memory (SOT-MRAM) have significant advantages compared to conventional SRAM due to…
Transition metal dichalcogenides (TMDs) are a class of two-dimensional (2D) materials been widely studied for emerging electronic properties. In this work, we use computational simulations to examine the water adsorption on TMDs…
A promising candidate for universal memory, which would involve combining the most favourable properties of both high-speed dynamic random access memory (DRAM) and non-volatile flash memory, is resistive random access memory (ReRAM). ReRAM…
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast…
The abrupt metal insulator transition in $VO_2$ is attracting considerable interest from both fundamental and applicative angles. We report on DC I-V characteristics measured on $VO_2$ single crystals in the two-probe configuration at…
Magnetic 2D materials have achieved significantly consideration owing to their encouraging applications. A variation of these 2D materials by occurrence of defects, by the transition-metal doping or adsorption or by the surface…
Charge density wave, or CDW, is usually associated with Fermi surfaces nesting. We here report a new CDW mechanism discovered in a 2H-structured transition metal dichalcogenide, where the two essential ingredients of CDW are realized in…
We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been…
Hyperuniform many-body systems in $d$-dimensional Euclidean space are characterized by completely suppressed (normalized) infinite-wavelength density fluctuations, and appear to be endowed with novel exotic physical properties. In this…
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable structural, electronic, and spin-related properties, particularly in the presence of point defects and molecular…
The discovery of two-dimensional (2D) van der Waals (vdW) materials often provides interesting playgrounds to explore novel phenomena. One of the missing components in 2D vdW materials is the intrinsic heavy-fermion systems, which can…
We show by a meta-analysis of the available Quantum Monte-Carlo (QMC) results that two-dimensional fermions with repulsive interactions exhibit universal behavior in the strongly-correlated regime, and that their freezing transition can be…
The formation of metallic nanofilaments bridging two electrodes across an insulator is a mechanism for resistive switching. Examples of such phenomena include atomic synapses, which constitute a distinct class of memristive devices whose…
The studies of the nonlinear optical (NLO) properties of the transition metal dichalcogenides (TMDs) coupled with photoactive particles, plasmonic nanocavities, waveguides, and metamaterials remain in their infancy. This study investigates…
Auxetic behavior quantified by the negative Poisson's ratio (NPR) is commonly attributed to geometry evolution with re-entrant mechanism or other mechanical factors, which is thought to be independent of electronic structures. Thus,…
Time series measurements in 2H-NbS$_2$ crystal had unravelled a drive induced transition wherein the critical current (Ic) changes from a low to a high Ic jammed vortex state, via a negative differential resistance (NDR) transition. Here,…
Two-dimensional (2D) van der Waals (vdW) multiferroics offer an attractive platform for four-state nonvolatile memory by combining switchable ferroelectric polarization and magnetization within a single material system. However, their…
Electrically driven metal-insulator transition in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high speed electronics. We report on the fabrication of out-of-plane VO2 metal-insulator-metal (MIM)…