Related papers: CNFET-based design of efficient ternary half adder…

In recent years, neuromorphic computing has gained attention as a promising approach to enhance computing efficiency. Among existing approaches, neurotransistors have emerged as a particularly promising option as they accurately represent…

Complementary metal oxide semiconductor technology (CMOS) has been faced critical challenges in nano-scale regime. CNTFET (Carbon Nanotube Field effect transistor) technology is a promising alternative for CMOS technology. In this paper, we…

Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the…

A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic…

We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electron transistor results in a robust three-valued output as a…

We consider theoretical models of the nanolaser and logic gates on carbon nanotubes (CNTs). In our work, it is shown at pumping the nanoresonator of the nanolaser on CNT by optical radiation using a quantum dot as nano light emitted diode…

We compare N*N quaternary digit and 2N*2N bit CNTFET multipliers in terms of Worst case delay, Chip area, Power and Power Delay Product (PDP) for N=1, N=2 and N=4. Both multipliers use Wallace reduction trees. HSpice simulations with 32-nm…

In today's world everyday a new technology which is faster, smaller and more complex than its predecessor is being developed. The increased number of transistors packed onto a chip of a conventional system results in increased power…

The design of balanced ternary digital logic circuits based on memristors and conventional CMOS devices is proposed. First, balanced ternary minimum gate TMIN, maximum gate TMAX and ternary inverters are systematically designed and verified…

In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics…

The advancements of nanomaterials or nanostructures have enabled the possibility of fabricating multifunctional materials that hold great promises in engineering applications. The carbon nanotube (CNT)-based nanostructure is one…

In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…

Ambipolar carbon nanotube based field-effect transistors (AP-CNFETs) exhibit unique electrical characteristics, such as tri-state operation and bi-directionality, enabling systems with complex and reconfigurable computing. In this paper,…

Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such transistors display strong ambipolar conduction, even when…

Although individual carbon nanotubes (CNTs) are superior as constituents to polymer chains, the mechanical and thermal properties of CNT fibers (CNTFs) remain inferior to commercial synthetic fibers due to the lack of synthesis methods to…

As the dimensions of electronic devices approach those of molecules, the size, geometry and chemical composition of the contact electrodes play increasingly dominant roles in device functions. It is shown here that single-walled carbon…

Truly polymorphic circuits, whose functionality/circuit behavior can be altered using a control variable, can provide tremendous benefits in multi-functional system design and resource sharing. For secure and fault tolerant hardware designs…

High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…

The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator…

We report density-functional theory (DFT), atomistic simulations of the non-equilibrium transport properties of carbon nanotube (CNT) field-effect transistors (FETs). Results have been obtained within a self-consistent approach based on the…