Related papers: Single-dopant band bending fluctuations in MoSe$_2…
We study the effect of a strongly fluctuating gauge field on a degenerate Bose liquid, relevant to the charge degrees of freedom in doped Mott insulators. We find that the superfluidity is destroyed. The resulting metallic phase is studied…
Moir\'e superlattices formed by transition metal dichalcogenide (TMD) heterobilayers provide a versatile platform for studying strongly correlated electronic, excitonic, and topological phenomena in solids. In particular, angle-aligned…
1$T$-TaSe$_2$ is widely believed to host a Mott metal-insulator transition in the charge density wave (CDW) phase according to the spectroscopic observation of a band gap that extends across all momentum space. Previous investigations…
Ni-doped MoS$_2$ is a layered material with useful tribological, optoelectronic, and catalytic properties. Experiment and theory on doped MoS$_2$ has focused mostly on monolayers or finite particles: theoretical studies of bulk Ni-doped…
We suggest that nonequilibrium Bose-Einstein condensates may occur in time-periodically driven interacting Bose gases. Employing the model of a periodically forced bosonic Josephson junction, we demonstrate that resonance-induced ground…
We study experimentally the fluctuations of the injected and dissipated energy in a system of a colloidal particle trapped in a double well potential periodically modulated by an external perturbation. The work done by the external force…
Silicon quantum dot qubits show great promise but suffer from charge noise with a 1/f^\alpha spectrum, where f is frequency and \alpha \lesssim 1. It has recently been proposed that 1/f^\alpha noise spectra can emerge from a few thermally…
A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects…
Molybdenum disulfide (MoS2) of single and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S-Mo-S layers of the samples was independently determined by contact-mode atomic-force…
We demonstrate that the measurement of $1/f^{\alpha}$ noise at the single molecule or nano-object limit is remarkably distinct from the macroscopic measurement over a large sample. The single particle measurements yield a conditional…
We discuss theoretically a setup where a time-dependent current consisting of a DC bias and two sinusoidal harmonics is driven through a sample. If the sample exhibits current-dependent shot noise, the down-converted noise power spectrum…
First-principles calculations reveal an unusual electronic state (dubbed as half excitonic insulator) in monolayer 1T-MX2 (M = Co, Ni and X = Cl, Br). Its one spin channel has a many-body ground state due to excitonic instability, while the…
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices…
Molybdenum disulfide (MoS$_2$) has attracted interest owing to its strain-tuned electronic and optical properties, making it a promising candidate for applications in strain engineering devices. In this study, we investigate the effect of…
We investigated the magnetotransport properties of Fe-doped topological insulator Sb1.96 Fe0.04Te3 single crystals. With doping, the band structure changes significantly and multiple Fermi pockets become evident in the Shubnikov-de Haas…
We establish low-temperature resonant inelastic light scattering (RILS) spectroscopy as a tool to probe the formation of a series of moir\'e-bands in twisted WSe_{2} bilayers by accessing collective intermoir\'e-band excitations (IMBE). We…
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability…
We fabricate ion-gated field-effect transistors (iFET) on mechanically exfoliated multilayer MoS$_2$. We encapsulate the flake by Al$_2$O$_3$, leaving the device channel exposed at the edges only. A stable Li$^+$ intercalation in the…
In the present work, an infrared LED is used to photodope MBE-grown Si:Al(0.3)Ga(0.7)As, a well known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport…
We use the high sensitivity to magnetic flux of mesoscopic conductance fluctuations in large quantum dots to investigate changes in the two-dimensional electron dispersion caused by an in-plane magnetic field. In particular, changes in…