Related papers: Spin-valley coupling anisotropy and noise in CMOS …

Solid-state systems which mimic two-level atoms are being actively developed. Improving the quantum coherence of these systems, for instance spin qubits or single photon emitters using semiconductor quantum dots, involves dealing with…

We have observed sub-Poissonian spin correlations generated by collisionally induced spin mixing in a spin-1 Bose-Einstein condensate. We measure a quantum noise reduction of -7 dB (-10 dB corrected for detection noise) below the standard…

Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast,…

Electron spin qubits are a promising platform for quantum computation. Environmental noise impedes coherent operations by limiting the qubit relaxation ($T_1$) and dephasing ($T_{\phi}$) times. There are multiple sources of such noise,…

The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for…

Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally…

Electron spins confined in silicon quantum dots are promising candidates for large-scale quantum computers. However, the degeneracy of the conduction band of bulk silicon introduces additional levels dangerously close to the window of…

We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We…

Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…

The excellent sensitivities of quantum sensors are a double-edged sword: minuscule quantities can be observed, but any undesired signal acts as noise. This is challenging when detecting quantities that are obscured by such noise. Decoupling…

Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and…

We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that…

Characterizing charge noise is of prime importance to the semiconductor spin qubit community. We analyze the echo amplitude data from a recent experiment [Yoneda et al., Nat. Nanotechnol. 13, 102 (2018)] and note that the data shows small…

Single-qubit gates are essential components of a universal quantum computer. Without selective addressing of individual qubits, scalable implementation of quantum algorithms is not possible. When the qubits are discrete points or regions on…

Spin and valley-orbit splittings are calculated in SiGe/Si/SiGe quantum wells (QWs) by using the tight-binding approach. In accordance with the symmetry considerations an existence of spin splitting of electronic states in perfect QWs with…

Hole spin qubits are frontrunner platforms for scalable quantum computers, but state-of-the-art devices suffer from noise originating from the hyperfine interactions with nuclear defects. We show that these interactions have a highly…

In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode…

Unexpected fluctuating charge field near a semiconductor quantum dot has severely limited the coherence time of the localized spin qubit. It is the interplay between the spin-orbit coupling and the asymmetrical confining potential in a…

The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over…

This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal…