Related papers: Dynamical Spin-Orbit-Based Spin Transistor
This chapter of "The Oxford Handbook of Nanoscience and Technology: Frontiers and Advances" reviews nonequilibrium Green function (NEGF) approach to modeling spin current generation, transport, and detection in semiconductor nanostructures…
Due to the recent experimental progress, tunable spin-orbit (SO) interactions represent ideal candidates for the control of polarization and dynamical spin properties in both quantum wells and cold atomic systems. A detailed understanding…
Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to…
Current-induced spin-orbit torque (SOT) in normal metal/ferromagnet (NM/FM) bilayers bears great promise for technological applications, but the microscopic origin of purely interfacial SOTs in ultra-thin systems is not yet fully…
Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental…
Spin-orbit interaction accounts for the coupling of momentum and spin degrees of freedom of electrons and holes in semiconductor materials. In quantum information processing, it allows for electrical control of spin states and for the…
Anisotropy of spin-orbit interaction (SOI) is studied for a single uncapped InAs self-assembled quantum dot (SAQD) holding just a few electrons. The SOI energy is evaluated from anti-crossing or SOI induced hybridization between the ground…
Semiconductor Rashba nanowires are quasi-one dimensional systems that have large spin-orbit (SO) coupling arising from a broken inversion symmetry due to an external electric field. There exist parametrized multiband models that can…
It is theoretically predicted that a traveling shear wave will create a spin current in certain direct-gap (for example III-V compound) semiconductors with contributions from both the valence bands and the conduction band (for $n$-doped…
We investigate the linear conductance of a stripe of spin-orbit interaction in a 2D electron gas; that is, a 2D region of length $\ell$ along the transport direction and infinite in the transverse one in which a spin-orbit interaction of…
We review the effects of the pair spin-orbit interaction (PSOI) in Rashba materials. The PSOI is the electron-electron interaction component that depends on the spin and momentum of the electrons. Being produced by the Coulomb fields of…
The Rashba Hamiltonian describes the splitting of the conduction band as a result of spin-orbit coupling in the presence of an asymmetric confinement potential and is commonly used to model the electronic structure of confined narrow-gap…
Using the non-equilibrium statistical operator method (NSO), we have investigated the spin transport through the interface in a semiconductor/ferromagnetic insulator hybrid structure. We have analyzed the approximation of effective…
Storing, transmitting, and manipulating information using the electron spin resides at the heart of spintronics. Fundamental for future spintronics applications is the ability to control spin currents in solid state systems. Among the…
Spin-dependent partial conductances are evaluated in a tight-binding description of electron transport in the presence of spin-orbit (SO) couplings, using transfer-matrix methods. As the magnitude of SO interactions increases, the…
A general expression for the spin Hall conductivity (SHC) in the s-wave superconducting state at finite temperatures is derived. Based on the expression, we study the SHC in a two-dimensional electron gas model in the presence of Rashba…
We review recent studies of the shot noise of spin-polarized charge currents and pure spin currents in multiterminal semiconductor nanostructures, while focusing on the effects brought by the intrinsic Rashba spin-orbit (SO) coupling and/or…
A Datta-Das spin field-effect transistor is built of a heterostructure with a Rashba spin-orbit interaction (SOI) at the interface (or quantum well) separating two possibly magnetized reservoirs. The particle and spin currents between the…
We consider a single electron confined within a quantum wire in a system of two electrostatically-induced QDs defined by nearby gates. The time-varying electric field, of single GHz frequency, perpendicular to the quantum wire, is used to…
The recent experimental discovery of three-dimensional (3D) materials hosting a strong Rashba spin-orbit coupling calls for the theoretical investigation of their transport properties. Here we study the zero temperature dc conductivity of a…