Related papers: Endurance-Limited Memories: Capacity and Codes

Phase-change memory (PCM) is a promising non-volatile solid-state memory technology. A PCM cell stores data by using its amorphous and crystalline states. The cell changes between these two states using high temperature. However, since the…

Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes…

Phase change memory (PCM) has recently emerged as a promising technology to meet the fast growing demand for large capacity memory in computer systems, replacing DRAM that is impeded by physical limitations. Multi-level cell (MLC) PCM…

Flash memory is a non-volatile computer memory comprising blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by erasing…

A write-once memory (wom) is a storage medium formed by a number of ``write-once'' bit positions (wits), where each wit initially is in a `0' state and can be changed to a `1' state irreversibly. Examples of write-once memories include SLC…

This paper considers coding for so-called partially stuck (defect) memory cells. Such memory cells can only store partial information as some of their levels cannot be used fully due to, e.g., wearout. First, we present new constructions…

Phase Change Memory (PCM) has rapidly progressed and surpassed Dynamic Random-Access Memory (DRAM) in terms of scalability and standby energy efficiency. Altering a PCM cell's state during writes demands substantial energy, posing a…

The pivotal storage density win achieved by solid-state devices over magnetic devices in 2015 is a result of multiple innovations in physics, architecture, and signal processing. One of the most important innovations in that regard is…

Large Language Models (LLMs) have been found to memorize and recite some of the textual sequences from their training set verbatim, raising broad concerns about privacy and copyright issues when using LLMs. This Textual Sequence…

This paper considers coding for so-called partially stuck memory cells. Such memory cells can only store partial information as some of their levels cannot be used due to, e.g., wear out. First, we present a new code construction for…

Regenerating codes are efficient methods for distributed storage in storage networks, where node failures are common. They guarantee low cost data reconstruction and repair through accessing only a predefined number of arbitrarily chosen…

In this work, we study a new model of defect memory cells, called partially stuck-at memory cells, which is motivated by the behavior of multi-level cells in non-volatile memories such as flash memories and phase change memories. If a cell…

Recently, flash memories have become a competitive solution for mass storage. The flash memories have rather different properties compared with the rotary hard drives. That is, the writing of flash memories is constrained, and flash…

Flash memory has been widely adopted as stand-alone memory and embedded memory due to its robust reliability. However, the limited endurance obstacles its further applications in storage class memory (SCM) and to proceed endurance-required…

Flash memories intended for SSD and mobile applications need to provide high random I/O performance. This requires using efficient schemes for reading small chunks of data (e.g. 0.5KB - 4KB) from random addresses. Furthermore, in order to…

Large language model (LLM) agents are constrained by limited context windows, necessitating external memory systems for long-term information understanding. Current memory-augmented agents typically depend on pre-defined instructions and…

The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…

A coding scheme for write once memory (WOM) using polar codes is presented. It is shown that the scheme achieves the capacity region of noiseless WOMs when an arbitrary number of multiple writes is permitted. The encoding and decoding…

As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…

Resistive memories are considered a promising memory technology enabling high storage densities with in-memory computing capabilities. However, the readout reliability of resistive memories is impaired due to the inevitable existence of…