Related papers: Endurance-Limited Memories: Capacity and Codes
Flash memory devices are winning the competition for storage density against magnetic recording devices. This outcome results from advances in physics that allow storage of more than one bit per cell, coupled with advances in signal…
Motivated by distributed storage applications, we investigate the degree to which capacity achieving encodings can be efficiently updated when a single information bit changes, and the degree to which such encodings can be efficiently…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by…
In the framework of write-once memory (WOM) codes, it is important to distinguish between codes that can be decoded directly and those that require that the decoder knows the current generation to successfully decode the state of the…
Data centres that use consumer-grade disks drives and distributed peer-to-peer systems are unreliable environments to archive data without enough redundancy. Most redundancy schemes are not completely effective for providing high…
With the end of Moore's Law, optimizing code for performance has become paramount for meeting ever-increasing compute demands, particularly in hyperscale data centers where even small efficiency gains translate to significant resource and…
We study error-correcting codes for permutations under the infinity norm, motivated by a novel storage scheme for flash memories call rank modulation. In this scheme, a set of $n$ flash cells are combined to create a single virtual…
We consider a large-scale matrix multiplication problem where the computation is carried out using a distributed system with a master node and multiple worker nodes, where each worker can store parts of the input matrices. We propose a…
Forming accurate memory of sequential stimuli is a fundamental function of biological agents. However, the computational mechanism underlying sequential memory in the brain remains unclear. Inspired by neuroscience theories and recent…
The pivotal storage density win achieved by solid-state devices over magnetic devices recently is a result of multiple innovations in physics, architecture, and signal processing. Constrained coding is used in Flash devices to increase…
Most efforts to improve the reasoning capabilities of large language models (LLMs) involve either scaling the number of parameters and the size of training data, or scaling inference computation by letting models generate complex chains of…
Most Large Language Model (LLM) agent memory systems rely on a small set of static, hand-designed operations for extracting memory. These fixed procedures hard-code human priors about what to store and how to revise memory, making them…
In recent years, due to the spread of multi-level non-volatile memories (NVM), $q$-ary write-once memories (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs $t$ times before erasing the cells. The…
This paper constructs WOM codes that combine rewriting and error correction for mitigating the reliability and the endurance problems in flash memory. We consider a rewriting model that is of practical interest to flash applications where…
As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…
Flash memory is a write-once medium in which reprogramming cells requires first erasing the block that contains them. The lifetime of the flash is a function of the number of block erasures and can be as small as several thousands. To…
This paper considers the memoryless input-constrained binary erasure channel (BEC). The channel input constraint is the $(d,\infty)$-runlength limited (RLL) constraint, which mandates that any pair of successive $1$s in the input sequence…
Electrochemical random-access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in-memory computing. One longstanding challenge of ECRAM is attaining retention time beyond a few hours. This…
We introduce a class of bosonic quantum error-correcting codes, termed \emph{extended binomial codes}, which generalize the structure of one-mode binomial codes by incorporating ideas from high-rate qubit stabilizer codes. These codes are…
Large Language Models for Code (code LLMs) have demonstrated remarkable performance across various software engineering (SE) tasks, increasing the application of code LLMs in software development. Despite the success of code LLMs, there…