Related papers: Optical bistable SOI micro-ring resonators for mem…
A proposal for an all-optical memory based on a bistability of single-mode states in a dual-mode diode laser with time-delayed optical feedback is presented. The system is modeled using a multimode extension of the Lang-Kobayashi equations…
In this study, we proposed and demonstrated a self-rectifying property of silicon nitride (Si3N4)-based resistive random access memory device by employing p-type silicon (p-Si) as bottom electrode. The RRAM devices consisted of…
Silicon microring modulator (Si-MRM) has become one of the most promising compact modulators to meet the increasing capacity requirements of the next generation optical interconnection. The limited electro-optical (E-O) bandwidth, low…
We propose a new label-free ultrasonic sensor, which comprises a slot wave-guide and double silicon-on-insulator (SOI) slot micro-ring resonators. The all-optical sensors do not suffer from electromagnetic interference. We choose to…
Photonic systems based on microring resonators have a fundamental constrain given by the strict relationship among free spectral range (FSR), total quality factor (QT) and resonator size, intrinsically making filter spacing, photonic…
Stochastic resonance (SR) is a phenomenon by which the presence of noise in a non-linear system allows for detection of a weak sub-threshold signal, or in a bi-stable system allows for sub-coercive switching between the two states. Simple…
The inverse stochastic resonance (ISR) phenomenon consists in an unexpected depression in the response of a system under external noise, e.g., as observed in the behavior of the mean-firing rate in some pacemaker neurons in the presence of…
We observe experimentally optical bistability enhanced through Fano interferences in high-Q localized silicon photonic crystal resonances (Q ~ 30,000 and modal volume ~ 0.98 cubic wavelengths). This phenomenon is analyzed through nonlinear…
VO$_{2}$ is a model material system which exhibits a metal to insulator transition at 67$^\circ$C. This holds potential for future ultrafast switching in memory devices, but typically requires a purely electronic process to avoid the slow…
Acoustic-optic (AO) modulation is critical for microwave and optical signal processing, computing and networking. Challenges remain to integrate AO devices on-chip using fabrication process compatible with complementary…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at…
Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect…
The increasing capacity of modern computers, driven by Moore's Law, is accompanied by smaller noise margins and higher error rates. In this paper we propose a memory device, consisting of a ring of two identical overdamped bistable…
We utilize cross-phase modulation to observe all-optical switching in microring resonators fabricated with hydrogenated amorphous silicon (a-Si:H). Using 2.7-ps pulses from a mode-locked fiber laser in the telecom C-band, we observe optical…
Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge…
Photonic microring resonators are used in a variety of chip-integrated sensing applications where they allow one to measure transmission intensity changes upon external signals with a sensitivity that scales linearly with the Q factor. In…
Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal…
This work presents a switchable frequency-selective rasorber (SFSR) with two operating modes. Switching from transmission to reflection can be achieved by appropriately adding feeders and PIN diodes based on cascaded two-dimensional lossy…