Related papers: Electronic Impurity Scattering Induced Spin Accumu…
In this review, we describe in detail two important spin-transport phenomena: the extrinsic spin-Hall effect (coming from spin-orbit interactions between electrons and impurities) and the spin-Coulomb drag. The interplay of these two…
We consider the Anomalous Hall Effect (AHE) in thin disordered ferromagnetic films. Using a microscopic model of electrons in a random potential of identical impurities including spin-orbit coupling, we develop a general formulation for…
We predict theoretically that, when a normal metallic thin film (without bulk spin-orbit coupling, such as Cu or Al) is sandwiched by two insulators, two prominent effects arise due to the interfacial spin-orbit coupling: a giant spin-Hall…
We present a model where two magnetic impurities in a discrete tight-binding ring become entangled because of scattering processes associated to the injection of a conduction electron. We introduce a weak coupling approximation that allows…
We study transport in normal metals in an external magnetic field. This system exhibits an interplay between a transverse spin imbalance (spin Hall effect) caused by the spin-orbit interaction, a Hall effect via the Lorentz force, and spin…
In the theory of dilute magnetic impurities in superconductors, the effect of all impurity spin-components is expressed via a single magnetic scattering rate $\Gamma_\mathrm{m}$. In a more realistic setting, magnetic impurities are…
The intrinsic spin-Hall effect on spin accumulation and electric conductance in a diffusive regime of a 2D electron gas has been studied for a 2D strip of a finite width. It is shown that the spin polarization near the flanks of the strip,…
We consider a hole-doped semiconductor with a sharp boundary and study the boundary spin accumulation in response to a charge current. First, we solve exactly a single-particle quantum mechanics problem described by the isotropic Luttinger…
Electrically generated spin accumulation due to the spin Hall effect is imaged in n-GaAs channels using Kerr rotation microscopy, focusing on its spatial distribution and time-averaged behavior in a magnetic field. Spatially-resolved…
Efficient spin/charge interconversion is desired to develop innovative spin-based devices. So far, the interconversion has been performed by using heavy atomic elements, strong spin-orbit interaction of which realizes the interconversion…
Uniaxial compressive strain along the [001] direction strongly suppresses the spin relaxation in silicon. When the strain level is large enough so that electrons are redistributed only in the two valleys along the strain axis, the dominant…
Experimental investigations of spin-charge interconversion in magnetic bilayers comprising a ferromagnet adjacent to a topological insulator have reported scattered results on the spin-charge and charge-spin conversion efficiency.…
Intrinsic and extrinsic spin Hall effects are considered together on an equal theoretical footing for the Rashba spin-orbit coupling in two-dimensional (2D) electron and hole systems, using the diagrammatic method for calculating the spin…
The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments…
We study the entanglement of magnetic impurities in an environment of electrons through successive scattering while an external magnetic field is applied. We show that the dynamics of the problem can be approximately described by a reduced…
We determined the spin-transport properties of Pd and Pt thin films by measuring the increase in ferromagnetic resonance damping due to spin-pumping in ferromagnetic (FM)-nonferromagnetic metal (NM) multilayers with varying NM thicknesses.…
We formulate a quasiclassical theory ($\omega_c\tau \lesssim 1$ with $\omega_c$ as the cyclotron frequency and $\tau$ as the relaxation time) to study the influence of magnetic field on electron-impurity scattering process in the…
The spin Hall effect and its inverse play key roles in spintronic devices since they allow conversion of charge currents to and from spin currents. The conversion efficiency strongly depends on material details, such as the electronic band…
Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel…
A nonequilibrium Green's function approach is employed to investigate the spin-Hall effect in diffusive two-dimensional electron systems with Rashba spin-orbit interaction. Considering a long-range electron-impurity scattering potential in…