Related papers: Fan-out enabled spin wave majority gate
The power flow process mediated by spin current in the bilayer device consisting of ferromagnetic metal (FM) and non-magnetic metal (NM) layers is examined by realizing experimental evaluations for each process from the microwave absorption…
Today, almost all information processing is performed using electronic logic circuits operating with up to several gigahertz frequency. All-optical logic, however, that holds the promise to allow up to three orders of magnitude higher speed…
We have performed the semilocal and hybrid density-functional theory (DFT) studies of the Sn/Ge(111) surface to identify the origin of the observed insulating ${\sqrt{3}}{\times}{\sqrt{3}}$ phase below ${\sim}$30 K. Contrasting with the…
In recent years, multifunctional materials have attracted increasing interest for magnetic memories and energy harvesting applications. Magnetic insulating materials are of special interest for this purpose, since they allow the design of…
We show that the established physics of spin valves together with the recently discovered giant spin-Hall effect could be used to construct Read and Write units that can be integrated into a single spin switch with input-output isolation,…
Dynamic quantum circuits combine mid-circuit measurement with classical feed-forward, enabling circuit constructions with reduced entangling-gate depth. Here, we investigate their use in Quantum Imaginary Time Evolution (QITE), where…
Certain insulating materials with strong spin-orbit coupling can conduct currents along their edges or surfaces. This phenomenon arises from the non-trivial topological properties of the electronic band-structure, and is somewhat similar to…
In the quest to develop spintronic logic, it was discovered that magnetoelectric switching results in lower energy and shorter switching time than other mechanisms. Magnetoelectric (ME) field due to exchange bias at the interface with a…
An intriguing idea of spin-orbit Mott insulator has been proposed to explain magnetic insulating behavior in various iridates. This scenario relies on the strength of the spin-orbit coupling being comparable to electronic correlations, and…
Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required…
Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (~3.3 x 1014 cm-2) densities corresponding to 1/2 electron per interface unit cell at complex oxide heterointerfaces (such as SrTiO3/GdTiO3 or SrTiO3/SmTiO3) is…
A macroscopic spintronic qubit based on spin superfluidity and spin Hall phenomena is proposed. This magnetic quantum information processing device realizes the spin-supercurrent analog of the superconducting phase qubit and allows for full…
Landauer's principle places a fundamental lower limit on the work required to perform a logically irreversible operation. Logically reversible gates provide a way to avoid these work costs, and also simplify the task of making the…
Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin…
Spin-spin exchange interactions between semiconductor spin qubits allow for fast single and two-qubit gates. During exchange, coupling of the qubits to a surrounding phonon bath may cause errors in the resulting gate. Here, the fidelities…
This paper presents a new \b{eta}-Ga2O3 junctionless double gate Metal-Oxide-Field-Semiconductor-Effect-Transistor (\b{eta}DG-JL-FET) that a P+ packet embedded in the oxide layer (PO-\b{eta}DG-JL-FET) for high-voltage applications. Our goal…
Superconducting qubits with tunable coupling are ideally suited for fast and accurate implementation of quantum logic. Here we present a simple approach, based on Weyl chamber steering, to CNOT gate design for inductively coupled phase…
Circuit obfuscation is a frequently used approach to conceal logic functionalities in order to prevent reverse engineering attacks on fabricated chips. Efficient obfuscation implementations are expected with lower design complexity and…
The aim of presented research is to design a nanodevice based on a gate-defined quantum dot within a MoS$_2$ monolayer in which we confine a single electron. By applying control voltages to the device gates we modulate the confinement…
The use of spin waves (SWs) as data carriers in spintronic and magnonic logic devices offers operation at low power consumption, free of Joule heating. Nevertheless, the controlled emission and propagation of SWs in magnetic materials…