Related papers: Anisotropic MagnetoMemristance
We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface electronic structure and the hybridization of the magnetic…
Simultaneous control of magnetic anisotropy and magnetoresistance, especially with atomic scale precision, remains a pivotal challenge for realizing advanced spintronic functionalities. Here we demonstrate cooperative continuous control…
A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…
Lord Kelvin with his discovery of the anisotropic magnetoresistance (AMR) phenomenon in Ni and Fe was 70 years ahead of the formulation of relativistic quantum mechanics the effect stems from, and almost one and a half century ahead of…
We compare non-local magnetoresistance measurements in multi-terminal Ni nanostructures with corresponding local experiments. In both configurations, the measured voltages show the characteristic features of anisotropic magnetoresistance…
The explosive growth of artificial intelligence and data-intensive computing has brought crucial challenge to modern information science and technology, i.e. conceptually new devices with superior properties are urgently desired. Memristor…
Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhance the PMA. Recently a strong enhancement of the PMA by…
Anisotropic magnetoresistance (AMR) is a ubiquitous and versatile probe of magnetic order in contemporary spintronics research. Its origins are usually ascribed to extrinsic effects (i.e. spin-dependent electron scattering), whereas…
We present a novel method for measuring the modulation of magnetic anisotropy and the strength of spin-orbit interaction by an electrical current in nanomagnets. Our systematic study explores the current dependencies of these properties…
The realization of four-fold anisotropic magnetoresistance (AMR) in novel 3d-5d heterostructures has boosted major efforts in antiferromagnetic spintronics. However, despite the potential of incorporating strong spin-orbit coupling, only…
The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record…
Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…
The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted…
Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory…
We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on…
The Perpendicular Shape Anisotropy Spin Transfer Torque Magnetic Random Access Memory (PSA-STT-MRAM) is a recent concept proposed to maintain the thermal stability of standard MRAM at small diameters, considering thick vertical pillars as…
Phenomena originated from spin-orbit interaction, such as magnetic anisotropy (MA), Rashba-type interactions, or topological insulators, have drawn huge attention for its intriguing physics. In particular, the search for a novel…
For anisotropic magneto-resistance (AMR) effect, its value synergistically depends on the magnitudes of magneto-resistance (MR) and magneto-crystalline anisotropy energy (MAE) simultaneously. In a magnetic material, the concurrence of…
Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal…
Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage…