Related papers: The TaichuPix1: A Monolithic Active Pixel Sensor w…

The proposed Circular Electron Positron Collider (CEPC) imposes new challenges for the vertex detector in terms of pixel size and material budget. A Monolithic Active Pixel Sensor (MAPS) prototype called TaichuPix, based on a column drain…

The Circular Electron-Positron Collider (CEPC), as the next-generation electron-positron collider, is tasked with advancing not only Higgs physics but also the discovery of new physics. Achieving these goals requires high-precision…

The Circular Electron-Positron Collider (CEPC), a proposed next-generation $e^+e^-$ collider to enable high-precision studies of the Higgs boson and potential new physics, imposes rigorous demands on detector technologies, particularly the…

Collider detectors have taken advantage of the resolution and accuracy of silicon detectors for at least four decades. Future colliders will need large areas of silicon sensors for low mass trackers and sampling calorimetry. Monolithic…

The International Linear Collider (ILC) is a project of an electron-positron (e+e-) linear collider with the centre-of-mass energy of 200-500 GeV. Monolithic Active Pixel Sensors (MAPS) are one of the proposed silicon pixel detector…

In order to achieve the challenging requirements on the CLIC vertex detector, a range of technology options have been considered in recent years. One prominent idea is the use of active sensors implemented in a commercial high-voltage CMOS…

Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF,…

A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature…

The Super Tau-Charm Facility (STCF) is a proposed $e^+e^-$ collider with a peak luminosity 100 times higher than that of the present tau-charm factory. The inner tracker (ITK) of STCF should feature a low material budget and high readout…

High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial High Voltage CMOS process and collect charge by drift inside a reversely biased diode. HV-MAPS represent a promising technology for future pixel tracking…

The Circular Electron Positron Collider (CEPC) has been proposed to enable more thorough and precise measurements of the properties of Higgs, W, and Z bosons, as well as to search for new physics. In response to the stringent performance…

Monolithic Active Pixel Sensors (MAPS) are a promising detector candidate for the inner tracker of the Super Tau-Charm Facility (STCF). To evaluate the performance of MAPS and the MAPS-based inner tracker, a dedicated simulation workflow…

Purpose: CMOS pixel sensors have become extremely attractive for future high performance tracking devices. Initial R\&D work has been conducted for the vertex detector for the proposed Circular Electron Positron Collider that will allow…

The MuPix Telescope is a particle tracking telescope, optimized for tracking low momentum particles and high rates. It is based on the novel High-Voltage Monolithic Active Pixel Sensors (HV-MAPS), designed for the Mu3e tracking detector.…

A prototype of the CMOS pixel sensor named SUPIX-1 has been fabricated and tested in order to investigate the feasibility of a pixelated tracker for a proposed Higgs factory, namely, the Circular Electron-Positron Collider (CEPC). The…

Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…

Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting…

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $\mu$m) in which charge is collected on an electrode, albeit by disordered and slow…

Monolithic Active Pixel Sensors (MAPS) combine the sensing part and the front-end electronics in the same silicon layer, making use of CMOS technology. Profiting from the progresses of this commercial process, MAPS have been undergoing…

This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they…