Related papers: Indirect light absorption model for highly straine…
The loss of surface plasmon polaritons has long been considered as a fatal shortcoming in information transport. Here we propose a plasmonic absorber utilizing this "shortcoming" to absorb the stray light in photonic integrated circuits…
The inter-band optical absorption in graphene characterized by its fine-structure constant has a universal value of 2.3\% independent of the material parameters. However, for several graphene-based photonic applications, enhanced optical…
We propose a thin, compact, broadband, polarization and angle insensitive metamaterial absorber based on a tungsten reflector, silicon spacer and a top pattern composed of a double square-like ring resonator utilizing nickel(Ni). In such a…
Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator…
The transparency of silicon in the infrared region enables the design of nano/microstructures for implementation in devices to harvest the infrared (IR) part of the solar spectrum. Herein we report a strategy that uses arrays of inverted…
We have extended the range of the high-pressure optical spectroscopy to the far-infrared region keeping the accuracy of ambient-pressure experiments. The newly-developed method offers a powerful tool for the study of pressure-induced phase…
Theory of light absorption and circular photocurrent in Weyl semimetals is developed for arbitrary large light intensities with account for both elastic and inelastic relaxation processes of Weyl fermions. The direct optical transition rate…
The design and fabrication of a metal-dielectric-metal absorber that achieves strong absorption from the ultraviolet (UV) to the near-infrared (near-IR) spectrum are presented. The proposed nanostructure consists of a periodic titanium (Ti)…
The photoluminescence and spin properties of ensembles of color centers in silicon carbide are enhanced by fabricating optically isolated slab waveguide structures and carefully controlling annealing and cooling conditions. We find that the…
The optical response of phosphorene can be gradually changed by application of moderate uniaxial compression, as the material undergoes the transition into an indirect gap semiconductor and eventually into a semimetal. Strain tunes not only…
Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented…
We propose a theoretical model to describe the strain-induced linear electro-optic (Pockels) effect in centro-symmetric crystals. The general formulation is presented and the specific case of the strained silicon is investigated in detail…
We investigated optical absorption spectra near the fundamental absorption edge of beta-FeSi2 single crystals by transmission measurements. The phonon structure corresponding to the emission and absorption component was clearly observed in…
Near perfect infrared light absorption at multi-spectral wavelengths has been experimentally demonstrated by using multiplexed metal square plasmon resonance structures. Optical power absorption over 95% has been observed in dual-band…
Significant (up to 6%) absorption of microwave power focused on a thin fiber (the diameter is three orders of magnitude less than the wavelength) by an ellipsoidal reflector is demonstrated experimentally. This new physical effect can be…
Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile…
Single-crystal silicon wafers were hyperdoped respectively by sulfur, selenium, and tellurium element using ion implantation and nanosecond laser melting. The hyperdoping of such chalcogen elements endowed the treated silicon with a strong…
This work focuses on the characterization of various bulk silicon (Si) samples using Fourier Transform InfraRed (FTIR) and grating spectrometers in order to get them suitable for applications in astronomy. Different samples at different…
Strain induced through fabrication, both by patterning and capping, can be used to change the properties of two-dimensional (2D) materials or other thin films. Here, we explore how capping layers impart strain to monolayer MoS$_{2}$ using…
We studied the optical absorption induced by 4.7eV pulsed laser radiation on Ge-doped a-SiO2 synthesized by a sol-gel technique. The absorption spectra in the ultraviolet spectral range were measured during and after the end of irradiation…