Related papers: Indirect light absorption model for highly straine…
We address the question of the optimal broadband absorption of waves in an open, dissipative system. We develop a general framework for absorption induced by multiple overlapping resonances, based on quasi-normal modes and radiative and…
Crystalline silicon is currently being discussed as test-mass material for future generations of gravitational wave detectors that will operate at cryogenic temperatures. We present optical absorption measurements on a large-dimension…
The absorption to mass ratio of the infrared arrays is enhanced to approximately 1.33 to 7.33 times larger than the previously reported structures by incorporating two design characteristics: first, the coupling of evanescent fields in the…
This work presents how first-principles simulations validated through experimental measurements lead to a new accurate prediction of the expected Raman shift as a function of strain in silicon. Structural relaxation of a strained primitive…
Stimulated Raman scattering is a well-known nonlinear process that can be harnessed to produce optical gain in a wide variety of media. This effect has been used to produce the first silicon-based lasers and high-gain amplifiers.…
White light spectral interferometry is applied to measure the refractive index in absorbing liquids in the spectral range from 400 to 1000 nm. We analyze the influence of absorption on the visibility of interferometric fringes and,…
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials…
The photomolecular effect has been hypothesized to enhance evaporation of water at visible wavelengths. This study develops a measurement technique to investigate its presence and magnitude at the liquid-vapor interface of water. The…
Absorption of a photon by an electron moving parallel to a rough surface is studied.In the weak scattering regime we have evaluated the absorption probability of absorption of a single photon. It is shown the absorption probability with…
The effects of chemical disorder on the electronic and optical properties of semiconductor alloy multilayers are studied based on the tight-binding theory and single-site coherent potential approximation. Due to the quantum confinement of…
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band…
Silicon p-n junction diodes emit low-intensity, broad-spectrum light near 1120 nm in forward bias and between 400-900 nm in reverse bias (avalanche). For the first time, we experimentally achieve optical absorption sensing of pigment in…
Intrinsic bilayer graphene is a gapless semimetal. Under the application of a bias field it becomes a semiconductor with a direct band gap that is proportional to the applied field. Under a layer-asymmetric strain (where the upper layer…
Using Ensemble Monte Carlo simulations the photocurrent in a 500nm long strained [110] silicon nanowire with diameter of 3.1 nm is investigated. It was observed that a phototransistor based on this nanowire can have responsivities in the…
We demonstrate greatly enhanced light absorption by monolayer graphene over a broad spectral range, from visible to near infrared, based on the attenuated total reflection. In the experiment, graphene is sandwiched between two dielectric…
Infrared absorption measurements in the range of 125 to 700 cm^(-1) have been carried out as a function of temperature upto 5 K in MgB2. The absorption spectrum is characterised by a broad band centred at 485 cm^{-1}, with shoulders at 333…
We present an ultra broadband thin-film infrared absorber made of saw-toothed anisotropic metamaterial. Absorbtivity of higher than 95% at normal incidence is supported in a wide range of frequencies, where the full absorption width at half…
A high quality amorphous silicon (a-Si) nanostructures has grown experimentally to study the origin of light emission and the quantum confinement effect in a-Si. The quantum confinement effect increases the band gap of material as the size…
A theoretical study of the band gap reduction under tensile stress is performed and validated through experimental measurements. First-principles calculations based on density functional theory (DFT) are performed for uniaxial stress…
Two-dimensional (2D) layered materials provide an ideal platform for engineering electronic and optical properties through strain control because of their extremely high mechanical elasticity and sensitive dependence of material properties…