Related papers: Tuning color centers at a twisted interface
Color centers in hexagonal boron nitride (hBN) have attracted significant interest due to their potential applications in future optical quantum technologies. For most applications, scalable on-demand fabrication is a key requirement.…
Low-power, high-speed and bright electrically driven true single-photon sources, which are able to operate at room temperature, are vital for the practical realization of quantum communication networks and optical quantum computations.…
We study the properties of two-color nonlinear localized modes which may exist at the interfaces separating two different periodic photonic lattices in quadratic media, focussing on the impact of phase mismatch of the photonic lattices on…
Defect color centers in hexagonal boron nitride (hBN) have gained significant interest as single-photon emitters and spin qubits for applications in a wide range of quantum technologies. As the integration of these solid-state quantum…
We demonstrate experimentally an efficient control of light intensity distribution inside a random scattering system. The adaptive wavefront shaping technique is applied to a silicon waveguide containing scattering nanostructures, and the…
Qubit technologies using nitrogen-vacancy color centers in diamonds require precise knowledge of the centers, including the number of emitters within a diffraction-limited spot and their orientations. However, the number of emitters is…
Colour centres in diamond are promising candidates as a platform for quantum technologies and biomedical imaging based on spins and/or photons. Controlling the emission properties of colour centres in diamond is a key requirement for…
The controlled and coherent manipulation of individual quantum systems is a fundamental key for the development of quantum information processing. The nitrogen-vacancy (NV) color center in diamond is a promising system since its…
The ability to control light-matter interfaces with solid-state photon emitters is a major requirement for the development of quantum photonic integrated circuits. We demonstrate controllable coupling between a quantum dot and an optical…
The ability to control the direction of scattered light in integrated devices is crucial to provide the flexibility and scalability for a wide range of on-chip applications, such as integrated photonics, quantum information processing and…
Color centers in wide-bandgap semiconductors are a promising class of solid-state quantum light source, many of which operate at room temperature. We examine a family of color centers in aluminum nitride, which emits close to 620 nm. We…
Hexagonal boron nitride is an emerging two-dimensional material with far-reaching applications in fields like nanophotonics or nanomechanics. Its layered architecture plays a key role for new materials such as Van der Waals…
Colour centres in silicon have great potential as single photon sources for quantum technologies. Some of them - like the T centre - also possess optically-active spins that enable spin-photon interfaces for generating entangled photons and…
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultra-violet optoelectronics. This is primarily due to…
Operating reconfigurable quantum circuits with single photon sources is a key goal of photonic quantum information science and technology. We use an integrated waveguide device comprising of directional couplers and a reconfigurable thermal…
Color centers in hexagonal boron nitride (hBN) are promising candidates as quantum light sources for future technologies. In this work, we utilize a scattering-type near-field optical microscope (s-SNOM) to study the photoluminescence (PL)…
Single photon emitters in hexagonal boron nitride have gathered a lot of attention due to their favourable emission properties and the manifold of possible applications. Despite extensive scientific effort, the exact atomic origin of these…
Spin defects like the negatively charged boron vacancy color center ($V_B^-$) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, we reveal the…
Quantum networking and computing technologies demand scalable hardware with high-speed control for large systems of quantum devices. Solid-state platforms have emerged as promising candidates, offering scalable fabrication for a wide range…
Charge control of color centers in semiconductors promises opportunities for novel forms of sensing and quantum information processing. Here, we articulate confocal fluorescence microscopy and magnetic resonance protocols to induce and…