Color centers in wide-bandgap semiconductors are a promising class of solid-state quantum light source, many of which operate at room temperature. We examine a family of color centers in aluminum nitride, which emits close to 620 nm. We present a technique to rapidly map an ensemble of these single photon emitters, identifying all emitters, not just those with absorption dipole parallel to the laser polarization. We demonstrate a fast technique to determine their absorption polarization orientation in the c-plane, finding they are uniformly distributed in orientation, in contrast to many other emitters in crystalline materials.
@article{arxiv.2310.06738,
title = {Polarization study of single color centers in aluminum nitride},
author = {J. K. Cannon and S. G. Bishop and J. P. Hadden and H. B. Yagci and A. J. Bennett},
journal= {arXiv preprint arXiv:2310.06738},
year = {2023}
}