Related papers: Giant Piezospintronic Effect in a Noncollinear Ant…
Frustrated itinerant ferromagnets, with non-collinear static spin structures, are an exciting class of material as their spin chirality can introduce a Berry phase in the electronic scattering and lead to exotic electronic phenomena such as…
Antiferromagnetic spintronics offers the potential for higher-frequency operations and improved insensitivity to magnetic fields compared to ferromagnetic spintronics. However, previous electrical techniques to detect antiferromagnetic…
Altermagnets can replace ferromagnets in tunnel junctions, yielding large tunneling magnetoresistance, ultrafast switching, and low-power functionality. While most studies explore the linear-response regime, interesting features emerge at…
Noncollinear antiferromagnets, such as Mn$_3$Sn and Mn$_3$Ir, were recently shown to be analogous to ferromagnets in that they have a large anomalous Hall effect. Here we show that these materials are similar to ferromagnets in another…
Electric-field control of magnetization promises to substantially enhance the energy efficiency of device applications ranging from data storage to solid-state cooling. However, the intrinsic linear magnetoelectric effect is typically small…
Dynamic modulation of electromagnetic responses is theoretically examined in dielectric antiferromagnets. While both magneto-electric and magneto-elastic coupling can achieve robust electrical control of magnetic anisotropy, the latter is…
The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route towards high-speed magnetic storage devices with low energy consumption and high…
To date, magnetic proximity effect (MPE) has only been conclusively observed in ferromagnet (FM) based systems. We report the observation of anomalous Hall effect and anisotropic magnetoresistance in angular dependent magnetoresistance…
The discovery of the intrinsic anomalous Hall effect (AHE) in noncollinear antiferromagnets where transverse Hall voltage emerges without magnetic field, has opened a plethora of promising opportunities in antiferromagnetic devices. The key…
The anomalous Nernst effect (ANE) - the generation of a transverse electric voltage by a longitudinal heat current in conducting ferromagnets or antiferromagnets - is an appealing approach for thermoelectric power generation in spin…
Spin-polarized currents play a key role in spintronics. Recently, it has been found that antiferromagnets with a non-spin-degenerate band structure can efficiently spin-polarize electric currents, even though their net magnetization is…
Antiferromagnetic spintronics exhibits ultra-high operational speed and stability in a magnetic field, holding promise for the realization of next-generation ultra-high-speed magnetic storage. However, theoretical exploration of the…
The kagome lattice antiferromagnets Mn$_3$X(= Sn, Ge) have a noncollinear 120$^\circ$ ordered ground state, which engenders a strong anomalous Hall response. It has been shown that this response is linked to the magnetic order and can be…
With its potential for drastically reduced operation power of information processing devices, electric field control of magnetism has generated huge research interest. Recently, novel perspectives offered by the inherently large spin-orbit…
We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode…
We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear…
The resistance of a heavy metal can be modulated by an adjacent magnetic material through the combined effects of the spin Hall effect, inverse spin Hall effect, and dissipation of the spin accumulation at the interface. This phenomenon is…
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes…
Altermagnetic (AM) materials have recently attracted significant interest due to the non-relativistic momentum-dependent spin splitting of their electronic band structure which may be useful for antiferromagnetic (AFM) spintronics. So far,…
We systematically studied the magnetoresistance effect in a Pt/(CoNi)n multilayer system with perpendicular magnetic anisotropy and the fcc (111) texture. The angular dependence of magnetoresistance, including high-order cosine terms, was…