Related papers: Hetero-structure Mode Space Method for Efficient D…
We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment [S. Vaitiekenas \emph{et al.}, Nat. Phys. (2020)], combining both spectroscopic results and microscopic device simulations. In particular,…
Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…
The electronic properties of quasi-one-dimensional anatase TiO2 nanostructures, in the form of thin nanowires having (101) and (001) facets, have been systematically investigated using the standard, hybrid density functional and…
The hole-doped antiferromagnetic spin-1/2 two-leg ladder is an important model system for the high-$T_c$ superconductors based on cuprates. Using the technique of self-similar continuous unitary transformations we derive effective…
After more than 30 years of validation of Moore's law, the CMOS technology has already entered the nanoscale (sub-100nm) regime and faces strong limitations. The nanowire transistor is one candidate which has the potential to overcome the…
Studying high-dimensional Hamiltonian systems with microstructure, it is an important and challenging problem to identify reduced macroscopic models that describe some effective dynamics on large spatial and temporal scales. This paper…
We propose a linearly implicit structure-preserving numerical method for semilinear Hamiltonian systems with polynomial nonlinearities, combining Kahan's method and exponential integrator. This approach efficiently balances computational…
Heterosubstrates have been extensively studied as a method to improve the heat dissipation of Ga$_{2}$O$_{3}$ devices. In this simulation work, we propose a novel role for $p$-type available heterosubstrates, as a component of a reduced…
We present a numerical method based on real-space renormalization that outputs the exact ground space of "frustration-free" Hamiltonians. The complexity of our method is polynomial in the degeneracy of the ground spaces of the Hamiltonians…
Although equivariant neural networks have become a cornerstone for learning electronic Hamiltonians, the intrinsic non-orthogonality of linear combinations of atomic orbitals (LCAO) basis sets poses a fundamental challenge. The…
The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very…
Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and lattice mismatches. However, III-nitride buffers in conventional…
We present a wide array of quantum measures on numerical solutions of 1D Bose- and Fermi-Hubbard Hamiltonians for finite-size systems with open boundary conditions. Finite size effects are highly relevant to ultracold quantum gases in…
Imagine an array with a massive (possibly uncountably infinite) number of antennas in a compact space. We refer to a system of this sort as Holographic MIMO. Given the impressive properties of Massive MIMO, one might expect a holographic…
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that…
Quantum machine learning for spin and molecular systems faces critical challenges of scarce labeled data and computationally expensive simulations. To address these limitations, we introduce Hamiltonian-Masked Autoencoding (HMAE), a novel…
We present a systematic study of quantum system compression for the evolution of generic many-body problems. The necessary numerical simulations of such systems are seriously hindered by the exponential growth of the Hilbert space dimension…
In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…
In order to perform quantum Hamiltonian dynamics minimizing localization effects, we introduce a quasi-one dimensional tight-binding model whose mean free path is smaller than the size of the sample. This one, in turn, is smaller than the…
Honeycomb-like microstructures have been shown to exhibit local elastic buckling under compression, with three possible geometric buckling modes, or pattern transformations. The individual pattern transformations, and consequently also…