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Quantum Monte Carlo methods are powerful tools for studying quantum many-body systems but face difficulties in accessing excited states and in treating sign problems. We present a continuous-time path-integral Monte Carlo method for…
Efficiently estimating energy expectation values of quantum lattice systems on quantum computers is a crucial subroutine for various quantum algorithms, which can lead to significant overhead due to the high measurement shot numbers…
InAs/GaSb and similar materials systems have generated great interest as a heterojunction for tunnel field effect transistors (TFETs) due to favorable band alignment. However, little is currently understood about how such TFETs are affected…
In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have…
We propose a novel quantum Monte Carlo method in configuration space, which stochastically samples the contribution from a large secondary space to the effective Hamiltonian in the energy dependent partitioning of L\"owdin. The method…
Dimensionality reduction in mechanical vibratory systems poses challenges for distributed structures including geometric nonlinearities, mainly because of the lack of invariance of the linear subspaces. A reduction method based on direct…
Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a…
Over the past few years one of us (Murthy) in collaboration with R. Shankar has developed an extended Hamiltonian formalism capable of describing the ground state and low energy excitations in the fractional quantum Hall regime. The…
Elastomeric mechanical metamaterials exhibit unconventional behaviour, emerging from their microstructures often deforming in a highly nonlinear and unstable manner. Such microstructural pattern transformations lead to non-local behaviour…
Quantum simulations of many-body systems offer novel methods for probing the dynamics of the Standard Model and its constituent gauge theories. Extracting low-energy predictions from such simulations rely on formulating…
Field-effect transistors (FETs) based on 2D materials have already reached the stage of trial FAB integration. However, reliability limitations caused by various defects present a serious obstacle for their smooth way forward, especially…
The k.p perturbation method for determination of electronic structure first pioneered by Kohn and Luttinger continues to provide valuable insight to several band structure features. This method has been adopted to heterostructures confined…
The effective Hamiltonian method is a powerful tool for simulating large-scale systems across a wide range of temperatures. However, previous methods for constructing effective Hamiltonian models suffer from key limitations: some require to…
Numerical models are powerful tools to predict the electromagnetic behavior of superconductors. In recent years, a variety of models have been successfully developed to simulate high-temperature-superconducting (HTS) coated conductor tapes.…
Semiconductor nanowires are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its…
Electronic band structure is a cornerstone of condensed matter physics and materials science. Conventional methods like Wannier interpolation (WI), which are commonly used to interpolate band structures onto dense k-point grids, often…
The amplitude (Higgs) mode near the two-dimensional superfluid-Mott glass quantum phase transition is studied. We map the Bose-Hubbard Hamiltonian of disordered interacting bosons onto an equivalent classical XY model in (2+1) dimensions…
We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices'…
The possibility of optimization of high voltage hybrid SIT-MOS transistors (HSMT) by local reduction of the lifetime near anode emitter and/or reduction of the anode emitter injection ability by three different ways has been investigated…
The dynamic behavior of jointed assemblies exhibiting friction nonlinearities features amplitude-dependent dissipation and stiffness. To develop numerical simulations for predictive and design purposes, macro-scale High Fidelity Models…