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Related papers: Piezoelectricity in hafnia

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Collinear dipole orders such as ferroelectricity and antiferroelectricity have developed rapidly in last decades. While, the noncollinear dipole orders are rarely touched in solids. Noncollinear dipole orders can provide a route to realize…

Materials Science · Physics 2024-11-01 Xinyu Yang , Jun Chen , Shan-Shan Wang , Shuai Dong

While nanoscale electronic logic circuits are well-established, the development of na-noscale thermal logic circuits has been slow, mainly due to the absence of efficient and controllable nonvolatile field-effect thermal transistors. In…

Materials Science · Physics 2025-03-25 Yong-Kun Huo , Hui-Feng Feng , Chao Yao , Zhong-Xiao Song , Zhi-Xin Guo

The observation of ferroelectric, ferromagnetic and ferroelastic phases in thin films of binary oxides attract the broad interest of scientists and engineers. However, the theoretical consideration of observed behaviour physical nature was…

Materials Science · Physics 2020-12-08 Maya Glinchuk , Anna Morozovska , Lesya Yurchenko

Multifunctional oxides are promising materials because of their fundamental physical properties as well as their potential in applications1. Among these materials, multiferroics exhibiting ferroelectricity and magnetism are good candidates…

Materials Science · Physics 2010-11-16 B. Kundys , M. Viret , D. Colson , D. O. Kundys

It has been recently demonstrated that the magnetic state of FeRh can be controlled by electric fields in FeRh/BaTiO$_{\text{3}}$ heterostructures [R.O. Cherifi et al. Nature Mater. 13, 345 (2014)]. Voltage-controlled changes in the…

The number of magnetoelectric multiferroic materials reported to date is scarce, as magnetic structures that break inversion symmetry and induce an improper ferroelectric polarization typically arise through subtle competition between…

Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for…

HfO2-based ferroelectric materials are promising for the next generation of memory devices, attracting significant attention. However, their potential applications are significantly limited by fatigue and imprint phenomena, which affect…

Materials Science · Physics 2024-07-30 Muting Xie , Hongyu Yu , Binhua Zhang , Changsong Xu , Hongjun Xiang

Organometallic lead halide perovskites are highly efficient materials for solar cells and other optoelectronic applications due to their high quantum efficiency and exceptional semiconducting properties. A peculiarity of these perovskites…

Spin-phonon interactions are central to many interesting phenomena, ranging from superconductivity to magnetoelectric effects. Yet, they are believed to have a negligible influence on the structural behavior of most materials. For example,…

Materials Science · Physics 2016-12-14 Claudio Cazorla , Oswaldo Dieguez , Jorge Iniguez

A microscopic model Hamiltonian for the ferroelectric field effect is introduced for the study of oxide heterostructures with ferroelectric components. The long-range Coulomb interaction is incorporated as an electrostatic potential, solved…

Materials Science · Physics 2011-10-25 Shuai Dong , Xiaotian Zhang , Rong Yu , J. -M. Liu , Elbio Dagotto

The properties of dielectric and piezoelectric oxides are determined by their processing history, crystal structure, chemical composition, microstructure, dopants (or defect) distribution, and defect kinetics. These materials are essential…

Materials Science · Physics 2025-04-03 Pedram Yousefian , Betul Akkopru-Akgun , Clive A. Randall , Susan Trolier-McKinstry

Ferroelectric hafnium oxide (${HfO_2}$) exhibits a thickness-dependent coercive field $(E_c)$ behavior that deviates from the trends observed in perovskites and the predictions of Janovec-Kay-Dunn (JKD) theory. Experiments reveal that, in…

Materials Science · Physics 2025-06-09 Revanth Koduru , Sumeet Kumar Gupta

The highly non-linear switching behavior of hafnia memristor actually hinders its wide application in neuromorphic computing. Theoretical understanding into its switching mechanism has been focused on the processes of conductive filament…

Materials Science · Physics 2024-09-17 Li-Heng Li , Kan-Hao Xue , Jun-Hui Yuan , Ge-Qi Mao , Xiangshui Miao

Antiferroelectrics have received blooming interests because of a wide range of potential applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and memory devices. Many of those applications are the most…

Materials Science · Physics 2023-12-29 Yangyang Si , Tianfu Zhang , Chenhan Liu , Sujit Das , Bin Xu , Roman G Burkovsky , Xian-Kui Wei , Zuhuang Chen

The ferroelectricity in $\mathrm{HfO}_2$ thin films is widely attributed to the formation of a polar orthorhombic phase named OIII phase. However, the complexity of OIII phase originated from its low symmetry becomes an obstacle for…

Materials Science · Physics 2026-03-17 Chenxi Yu , Jiajia Zhang , Xujin Song , Fei Liu , Jinfeng Kang

Abundant chemical diversity and structural tunability make organic-inorganic hybrid perovskites (OIHPs) a rich ore for ferroelectrics. However, compared with their inorganic counterparts such as BaTiO$_3$, their ferroelectric key…

Materials Science · Physics 2023-05-22 Kun Ding , Haoshen Ye , Changyuan Su , Yu-An Xiong , Guowei Du , Yu-Meng You , Zhi-Xu Zhang , Shuai Dong , Yi Zhang , Da-Wei Fu

By performing first-principles calculations on four capacitor structures based on BaTiO3 and PbTiO3, we determine the intrinsic interfacial effects that are responsible for the destabilization of the polar state in thin-film ferroelectric…

Materials Science · Physics 2011-03-03 Massimiliano Stengel , David Vanderbilt , Nicola A. Spaldin

Highly ordered Bi2FeMnO6 epitaxial thin films have been successfully grown on SrTiO3 substrate. Both synchrotron X-ray reciprocal space mapping and high resolution transmission electron microscopy confirmed the alternative alignment of Fe…

We consider phase separated states in magnetic oxides (MO) thin films. We show that these states have a non-zero electric polarization. Moreover, the polarization is intimately related to a spatial distribution of magnetization in the film.…

Strongly Correlated Electrons · Physics 2019-10-09 O. G. Udalov , I. S. Beloborodov
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