Related papers: Towards GaAs Thin-Film Tracking Detectors
Thin Film technology has widespread applications in everyday electronics, notably Liquid Crystal Display screens, solar cells, and organic light emitting diodes. We explore the potential of this technology as charged particle radiation…
Silicon tracking detectors have grown to cover larger surface areas up to hundreds of square meters, and are even taking over other sub-detectors, such as calorimeters. However, further improvements in tracking detector performance are more…
Thin film detectors which incorporate semiconductor materials other than silicon have the potential to build upon their unique material properties and offer advantages such as faster response times, operation at room temperature, and…
Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit non-classical states of light for distributed photon based quantum information technologies. In this article, we review our recent…
The HASPIDE (Hydrogenated Amorphous Silicon PIxels DEtectors) project aims at the development of thin hydrogenated amorphous silicon (a-Si:H) detectors on flexible substrates (mostly Polyimide) for beam monitoring, neutron detection and…
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $\mu\textrm{m}$ - 130…
We prepare NbN thin films by DC magnetron sputtering on [100] GaAs substrates, optimise their quality and demonstrate their use for efficient single photon detection in the near-infrared. The interrelation between the Nb:N content, growth…
It is the hybrid pixel detector technology which brought to the X-ray imaging a low noise level at a high spatial resolution, thanks to the single photon counting. However, silicon as the most widespread detector material is marginally…
GaAs-based light-emitting diodes (LEDs) are commonly employed in a variety of applications, including medical imaging, biosensing, optical communications, and night vision. In this paper, we present an alternative application of GaAs-based…
We investigated the suitability of AlN as a buffer layer for NbN superconducting nanowire single-photon detectors (SNSPDs) on GaAs. The NbN films with a thickness of 3.3 nm to 20 nm deposited onto GaAs substrates with AlN buffer layer,…
Two samples of silicon pad sensors and two samples of GaAs sensors are studied in an electron beam with 5 GeV energy from the DESY-II test-beam facility. The sizes of the silicon and GaAs sensors are about 9$\times$9 cm$^2$ and 5$\times$8…
The motivation for investigating the use of GaAs as a material for detecting particles in experiments for High Energy Physics (HEP) arose from its perceived resistance to radiation damage. This is a vital requirement for detector materials…
Germanium thin films are an excellent candidate for use as a low-loss dielectric in superconducting microwave resonators, a low-loss inter-layer metal wiring dielectric, and passivation layers in microwave and Josephson junction devices. In…
The axion is a hypothetical particle which is a candidate for cold dark matter. Haloscope experiments directly search for these particles in strong magnetic fields with RF cavities as detectors. The Relic Axion Detector Exploratory Setup…
GaMnAs thin films with different Mn doping concentrations were grown via molecular beam epitaxy using a substrate temperature of 250 {\deg}C. The thin films were investigated using photoluminescence (PL) measurements from 8 to 300 K.…
We report a method to obtain insights into lower thermal conductivity of \beta-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical…
Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on…
GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) measurements from 8 to 300 K. The carrier concentrations in the…
We present Nb thin films deposited in-situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are…