Related papers: Vertical GaN Devices: Process and Reliability
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence,…
Thanks to its high refractive index contrast, band gap and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet…
Advances in power electronics have made it possible to achieve high power levels, e.g., reaching GW in grids, or alternatively high output bandwidths, e.g., beyond MHz in communication. Achieving both simultaneously, however, remains…
Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac materials, graphene and topological insulator, can considerably…
A fundamental road block for all-optical information processing is the difficulty in realizing a silicon optical transistor with the ability to provide optical gain, input output isolation and buffer action. In this work, we demonstrate an…
CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher…
Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001)substrates. In situ reflection high energy electron diffraction was used to quantitatively determine the Ga coverage of the GaN surface during growth.…
GaN high electron mobility transistors (HEMT) have gained some foothold in the power electronics industry due to wide frequency bandwidth and power handling. The material offers a wide bandgap and higher critical field strength compared to…
With the aim of investigating the possible integration of opto-electronic devices, epitaxial GaN layers have been grown on Si(111) SOI and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a…
Van der Waals heterostructures formed by stacking of various two-dimensional materials are promising in electronic applications. However, the performances of most reported electronic devices based on van der Waals heterostructures are far…
High-efficiency micro-light-emitting diodes (Micro-LEDs) are key devices for next-generation display technology. However, when the mesa size is reduced to around tens of micrometers or less, the luminous efficiency is constrained by the…
In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from…
Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements, and by the advantages of integrating these elements in a silicon materials platform, we investigate the properties of…
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…
Scientists are always yearning for new and exciting ways to unlock graphene's true potential. However, recent reports suggest this two-dimensional material may harbor some unique properties, making it a viable candidate for use in…
Recent reports on machine learning (ML) and machine vision (MV) devices have demonstrated the potentials of 2D materials and devices. Yet, scalable 2D devices are being challenged by contact resistance and Fermi Level Pinning (FLP), power…
In this paper, we show that ultrathin GaN membranes having a thickness of 15 nm and planar dimensions of 12x184 microns act as memristive devices. This fact is due to the migration of the negatively charged deep traps, which form in the…
In this study, a 6 nm layer of Magnesium Silicate (Mg-Silicate) was deposited on AlGaN/GaN heterostructure by sputtering of multiple stacks of MgO and SiO$_{2}$, followed by rapid thermal annealing in a nitrogen (N$_{2}$) environment. The…
We report on experimental realization of p-n heterojunctions based on p-type GaN, and an n-type correlated oxide, VO2. The band offsets are evaluated by current-voltage and capacitance voltage measurements at various temperatures. A band…
We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and…