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1T-TaS$_2$ is a layered charge density wave (CDW) crystal exhibiting sharp phase transitions and associated resistance changes. These resistance steps could be exploited for information storage, underscoring the importance of controlling…

Monolayer transition metal dichalcogenides (e.g., MoS2) exhibit exceptionally large optical nonlinearities for high-order nonlinear light generation (NLG), yet their inherent atomic thickness fundamentally limits light-matter interactions…

The two-dimensional transition metal carbide/nitride family (MXenes) has garnered significant attention due to their highly customizable surface functional groups. Leveraging modern material science techniques, the customizability of MXenes…

Mesoscale and Nanoscale Physics · Physics 2023-10-31 Jiamin Liu , Guo Li , Xinxu Zhang , Jiahao Wei , Hui Jia , Yulong Wu , Changlong Liu , Yonghui Li

Molybdenum Disulfide (MoS$_2$) has been recognized as a potential substitution of Platinum (Pt) for electrochemical hydrogen evolution reaction (HER). However, the broad adoption of MoS$_2$ is hindered by its limited number of active sites…

Chemical Physics · Physics 2021-09-27 Sichen Wei , Yu Fu , Huamin Li , Fei Yao

MoS2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next generation electronic and electro-optical devices. Here we have…

Materials Science · Physics 2016-11-15 Chih-Shan Tan , Yu-Jung Lu , Chun-Chi Chen , Pei-Hsuan Liu , Shangjr Gwo , Guang-Yu Guo , Lih-Juann Chen

In this work a simple approach to transform MoS$_2$ from its metallic (1T' to semiconductor 2H) character via gold nanoparticle surface decoration of a MoS$_2$ graphene oxide (rGO) nanocomposite is proposed. The possible mechanism to this…

Charge transfer in type-II heterostructures plays important roles in determining device performance for photovoltaic and photocatalytic applications. However, current theoretical studies of charge transfer process don't consider the effects…

Materials Science · Physics 2023-08-09 Zhi-Guo Tao , Guo-Jun Zhu , Weibin Chu , Xin-Gao Gong , Ji-Hui Yang

The graphene/MoS2 heterojunction formed by joining the two components laterally in a single plane promises to exhibit a low-resistance contact according to the Schottky-Mott rule. Here we provide an atomic-scale description of the…

Materials Science · Physics 2017-04-11 Wei Chen , Yuan Yang , Zhenyu Zhang , Efthimios Kaxiras

Optical properties of heterostructures composed of layered 2D materials, such as transition metal dichalcogenides (TMDs) and graphene, are broadly explored. Of particular interest are light-induced energy transfer mechanisms in these…

Materials Science · Physics 2024-09-17 Amir Kleiner , Daniel Hernangómez-Pérez , Sivan Refaely-Abramson

Two-dimensional (2D) heterostructures reveal novel physicochemical phenomena at different length scales, that are highly desirable for technological applications. We present a comprehensive density functional theory study of van der Waals…

Materials Science · Physics 2024-10-21 Kati Asikainen , Matti Alatalo , Marko Huttula , S. Assa Aravindh

The large family of layered transition-metal dichalcogenides is widely believed to constitute a second family of two-dimensional (2D) semiconducting materials that can be used to create novel devices that complement those based on graphene.…

We present a novel methodology to synthesize two-dimensional (2D) lateral heterostructures of graphene and MoS2 sheets with molecular carbon nanomembranes (CNMs), which is based on electron beam induced stitching. Monolayers of graphene and…

Metal nanostructures confined between sp2 hybridized 2D materials and solid supports are attracting attention for their potential application in new nanotechnologies. Model studies under well-defined conditions are valuable for…

We investigate the nonequilibrium topological phases of monolayer 1T$^\prime$--MoS$_2$ under high-frequency circularly polarized driving using a low-energy $k\!\cdot\!p$ Hamiltonian combined with a van Vleck expansion. The off-resonant…

Mesoscale and Nanoscale Physics · Physics 2025-11-20 Mohammad Mortezaei Nobahari

Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in…

Fifteen years have passed since graphene was first isolated on the substrate from bulk graphite. During that period, 2D layered materials with intrinsic band gaps have been realized. Although many exciting results have been reported for…

Materials Science · Physics 2020-12-03 Kosuke Nagashio

Using ab-initio calculations within the framework of Density Functional Theory (DFT), atomic structures and electronic properties of MoS2/HfO2 interface are investigated. The impact of interfacial oxygen concentration on the MoS2/HfO2…

Materials Science · Physics 2014-02-10 Santosh KC , Roberto C. Longo , Robert M. Wallace , Kyeongjae Cho

Ultrafast charge transfer processes provide a facile way to create interlayer excitons in directly contacted transition metal dichalcogenide (TMD) layers. More sophisticated heterostructures composed of TMD/hBN/TMD enable new ways to…

Mesoscale and Nanoscale Physics · Physics 2023-01-12 Yoseob Yoon , Zuocheng Zhang , Ruishi Qi , Andrew Y. Joe , Renee Sailus , Kenji Watanabe , Takashi Taniguchi , Sefaattin Tongay , Feng Wang

Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power dissipation. Energy efficient FETs operate in enhancement…

Recent development of ultrashort laser pulses allows for optical control of structural and electronic properties of complex quantum materials. The layered transition metal dichalcogenide MoTe2, which can crystalize into several different…

Materials Science · Physics 2019-05-29 M. Y. Zhang , Z. X. Wang , Y. N. Li , L. Y. Shi , D. Wu , T. Lin , S. J. Zhang , Y. Q. Liu , C. N. Wang , Q. M. Liu , J. Wang , T. Dong , N. L. Wang
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