Related papers: Voltage-controlled Hubbard spin transistor

A key challenge in quantum computation is the implementation of fast and local qubit control while simultaneously maintaining coherence. Qubits based on hole spins offer, through their strong spin-orbit interaction, a way to implement fast…

Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…

Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor,…

The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable,…

Considerations of feasibility of quantum computing lead to the study of multispin quantum gates in which the input and output two-state systems (spins) are not identical. We provide a general discussion of this approach and then propose an…

One fundamental requirement for quantum computation is to perform universal manipulations of quantum bits at rates much faster than the qubit's rate of decoherence. Recently, fast gate operations have been demonstrated in logical spin…

This article traces a brief history of the use of single electron spins to compute. In classical computing schemes, a binary bit is represented by the spin polarization of a single electron confined in a quantum dot. If a weak magnetic…

To date, endeavors in nanoscale spintronics are dominated by the use of single-electron or single-spin transistors having at their heart a semiconductor, metallic or molecular quantum dot who's localized states are non-spin-degenerate and…

We consider low temperature transport through a lateral quantum dot asymmetrically coupled to two conducting leads, and tuned to the mixed-valence region separating two adjacent Coulomb blockade valleys with spin S=1/2 and S=1 on the dot.…

Strongly interacting spins underlie many intriguing phenomena and applications ranging from magnetism to quantum information processing. Interacting spins combined with motion display exotic spin transport phenomena, such as superfluidity…

The electron spin is a natural two level system that allows a qubit to be encoded. When localized in a gate defined quantum dot, the electron spin provides a promising platform for a future functional quantum computer. The essential…

A two-electron system confined in two coupled semiconductor quantum dots is investigated as a candidate for performing quantum logic operations on spin qubits. We study different processes of swapping the electron spins by controlled…

Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit…

We present an approach for entangling spin qubits via capacitive coupling mediated by an ac electric field-driven multielectron mediator quantum dot. To illustrate this method, we consider the case of a driven two-electron dot that mediates…

We report coherent operation of a singlet-triplet qubit controlled by the arrangement of two electrons in an adjacent double quantum dot. The system we investigate consists of two pairs of capacitively coupled double quantum dots fabricated…

A quantum thermal device based on three nearest-neighbor coupled spin-1/2 systems controlled by the magnetic field is proposed. We systematically study the steady-state thermal behaviors of the system. When the two terminals of our system…

We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which…

A number of spintronic junction transistors, that exploit the spin degree of freedom of an electron in addition to the charge degree of freedom, have been proposed to provide simultaneous non-volatile storage and signal processing…

We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and…

The double quantum dot device benefits from the advantages of both the spin and charge qubits, while offering ways to mitigate their drawbacks. Careful gate voltage modulation can grant greater spinlike or chargelike dynamics to the device,…