Related papers: GaN HEMT based high energy particles detection pre…

This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures. By means of a custom setup, (i) we investigated the…

High Energy Physics (HEP) needs a huge amount of computing resources. In addition data acquisition, transfer, and analysis require a well developed infrastructure too. In order to prove new physics disciplines it is required to higher the…

The motivation for investigating the use of GaAs as a material for detecting particles in experiments for High Energy Physics (HEP) arose from its perceived resistance to radiation damage. This is a vital requirement for detector materials…

Graphene field-effect transistors (GFETs) are among the most promising platforms for ultrasensitive chemical and biological sensing due to their high carrier mobility, large surface area, and low intrinsic noise. However, conventional…

In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations…

The effect of a two dimensional (2D) graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) has been systematically analyzed.…

Self-heating in next-generation, high-power-density field-effect transistor limits performance and complicates fabrication. Here, we introduce NEP-FET, a machine-learned framework for device-scale heat transport simulations of field-effect…

In this paper, we report the use of lanthanum (La) in S/D contacts of GaN HEMTs, achieving 0.97 Ohm-mm contact resistance without S/D recess. The HEMTs show well-behaved electrical characteristics and satisfactory reliability. Our studies…

We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board…

The High Energy Physics group of the University of Texas at Arlington Physics Department has been developing Gas Electron Multiplier (GEM) detectors for use as the sensitive gap detector in digital hadron calorimeters (DHCAL) for the future…

A new generation of high-resolution hypernuclear gamma$-spectroscopy experiments with high-purity germanium detectors (HPGe) are presently designed at the FINUDA spectrometer at DAPhiNE, the Frascati phi-factory, and at PANDA, the…

GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from…

The paper describes the project, implementation and test of a C-band (5GHz) Low Noise Amplifier (LNA) using new low noise Pseudomorphic High Electron Mobility Transistors (pHEMTS) from Avago. The amplifier was developed to be used as a cost…

Recently, a p-GaN gate double channel HEMT (DC-HEMT) with conductivity modulation has been reported. The conductivity modulation is realized by hole storage in the gate stack and observed under quasi-static measurements. In this work,…

Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the…

Near-field radiative heat transfer (NFHT) research currently suffers from an imbalance between numerous theoretical studies, as opposed to experimental reports that remain, in proportion, relatively scarce. Existing experimental platforms…

To develop effective thermal management strategies for GaN transistors, it is essential to accurately predict the device junction temperature. Since the width of the heat generation in the devices is comparable to phonon mean free paths of…

Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between…

In this letter, N2 and forming gas (FG) were used during ohmic contact annealing of InAlN/GaN HEMTs on Si. It is found that N2 annealing offers lower ohmic contact resistance (RC) while FG annealing features lower sheet resistance (Rsheet).…

Recently High Electron Mobility Transistor (HEMT) inspired III-V electro-optic modulator topologies were proposed for realizing high speed electro-optic modulators leveraging plasma dispersion effect due to the 2D Electron Gas (2DEG)…