English
Related papers

Related papers: SrPd, a candidate material with extremely large ma…

200 papers

Using a multi-conduction-channel model, we redefined the micromechanism of spin Hall magnetoresistance (SMR). Four conduction channels are created by spin accumulation of nonpolarized electron flow at top, bottom, left and right interfaces…

Materials Science · Physics 2015-02-17 Yan-Qing Zhang , Hua-Rui Fu , Niu-Yi Sun , Wen-Ru Che , Ding Ding , Juan Qin , Cai-Yin You , Zhen-Gang Zhu , Rong Shan

Materials with strong magnetoresistive responses are the backbone of spintronic technology, magnetic sensors, and hard drives. Among them, manganese oxides with a mixed valence and a cubic perovskite structure stand out due to their…

A large negative magnetoresistance is anticipated in topological semimetals in the parallel magnetic and electric field configuration as a consequence of the nontrivial topological properties. The negative magnetoresistance is believed to…

Strongly Correlated Electrons · Physics 2016-01-12 Hui Li , Hongtao He , Hai-Zhou Lu , Huachen Zhang , Hongchao Liu , Rong Ma , Zhiyong Fan , Shun-Qing Shen , Jiannong Wang

Transition metal dichalcogenides (TMDs) are promising materials for efficient generation of current-induced spin-orbit torques on an adjacent ferromagnetic layer. Numerous effects, both interfacial and bulk, have been put forward to explain…

A linear unsaturating magnetoresistance at high perpendicular magnetic fields, together with a quadratic positive magnetoresistance at low fields, has been seen in many different experimental materials, ranging from silver chalcogenides and…

Mesoscale and Nanoscale Physics · Physics 2017-12-20 Navneeth Ramakrishnan , Ying Tong Lai , Silvia Lara , Meera M. Parish , Shaffique Adam

Materials that demonstrate large magnetoresistance have attracted significant interest for many decades. Recently, extremely large tunnel magnetoresistance (TMR) has been reported by several groups across ultrathin CrI$_3$ by exploiting the…

Materials Science · Physics 2019-07-17 Hyun Ho Kim , Bowen Yang , Shangjie Tian , Chenghe Li , Guo-Xing Miao , Hechang Lei , Adam W. Tsen

Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an…

The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same…

Materials Science · Physics 2014-11-26 I. Pletikosić , Mazhar N. Ali , A. Fedorov , R. J. Cava , T. Valla

Lanthanide (Ln) based LnSbTe materials have garnered significant attention due to rich interplay of long range magnetic ordering and topological properties, driven by unique crystalline symmetry, 4f electron interactions, and pronounced…

The noncentrosymmetric Half Heusler compound YPtBi exhibits superconductivity below a critical temperature T_c = 0.77 K with a zero-temperature upper critical field H_c2(0) = 1.5 T. Magnetoresistance and Hall measurements support…

Superconductivity · Physics 2011-12-22 Nicholas P. Butch , P. Syers , Kevin Kirshenbaum , Andrew P. Hope , Johnpierre Paglione

We report the discovery of giant and anisotropic magnetoresistance due to the orbital rearrangement in a non-magnetic correlated metal. In particular, we measured the magnetoresistance under fields up to 31.4 T in the cubic Pr-based heavy…

Ta$_4$Pd$_3$Te$_{16}$ is a recently discovered superconductor that has been suggested to be an unconventional superconductor near magnetism. We report electronic structure calculations showing that in spite of the layered crystal structure…

Superconductivity · Physics 2014-10-07 D. J. Singh

The authors present a quantity termed charge-spin susceptibility, which measures the charge response to spin degrees of freedom in strongly correlated materials. This quantity is simple to evaluate using both standard density functional…

Superconductivity · Physics 2021-02-23 J. N. B. Rodrigues , Lucas K. Wagner

The layered material ZrTe$_5$ appears to exhibit several exotic behaviors which resulted in significant interest recently, although the exact properties are still highly debated. Among these we find a Dirac/Weyl semimetallic behavior,…

We present electronic transport and magnetic properties of single crystals of semimetallic half-Heusler phase LuPdBi, having theoretically predicted band inversion requisite for nontrivial topological properties. The compound exhibits…

Materials Science · Physics 2015-03-19 Orest Pavlosiuk , Dariusz Kaczorowski , Piotr Wiśniewski

We report a transport study on Pd$_3$In$_7$ which displays multiple Dirac type-II nodes in its electronic dispersion. Pd$_3$In$_7$ is characterized by low residual resistivities and high mobilities, which are consistent with Dirac-like…

Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental…

Mesoscale and Nanoscale Physics · Physics 2019-01-23 Miao Wang , Chengyu Wang , Chenchen Wu , Qiao Li , Chen Pan , Cong Wang , Shi-Jun Liang , Feng Miao

By applying the conventional two-liquid model to the magnetoresistivity tensor, we reveal a record-high carrier mobility for surface states in tetradymite topological insulators ($\sim$ 20000 cm$^2$/Vs) in both bulk crystals and thin flakes…

Mesoscale and Nanoscale Physics · Physics 2025-11-20 M. V. Pugachev , A. E. Borisov , A. V. Shupletsov , V. O. Sakhin , E. F. Kukovitsky , A. Yu. Kuntsevich

Topological nodal-line semimetals support protected band crossings which form nodal lines or nodal loops between the valence and conduction bands and exhibit novel transport phenomena. Here we address the topological state of the nodal-line…

Materials Science · Physics 2020-08-04 Antu Laha , Sougata Mardanya , Bahadur Singh , Hsin Lin , Arun Bansil , Amit Agarwal , Z. Hossain

The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related…