Related papers: A Fokker-Planck Solver to Model MTJ Stochasticity

Stochastic magnetic tunnel junctions (s-MTJs) are core components for spintronics-based probabilistic computing (p-computing), a promising candidate for energy-efficient unconventional computing. To achieve reliable performance under…

CMOS-compatible HfO2-based ferroelectric tunnel junction (FTJ) has attracted significant attention as a promising candidate for in-memory computing (IMC) due to its extremely low power consumption. However, conventional FTJs face inherent…

This paper introduces an analog-to-stochastic converter using a magnetic tunnel junction (MTJ) device for vision chips based on stochastic computation. Stochastic computation has been recently exploited for area-efficient hardware…

Brain-inspired computing architectures attempt to mimic the computations performed in the neurons and the synapses in the human brain in order to achieve its efficiency in learning and cognitive tasks. In this work, we demonstrate the…

We demonstrate that thermally stable perpendicular magnetic tunnel junctions (pMTJs), widely used in spin-transfer torque magnetic random-access memory, can be actuated with nanosecond pulses to exhibit tunable stochastic behavior. This…

The spatiotemporal nature of neuronal behavior in spiking neural networks (SNNs) make SNNs promising for edge applications that require high energy efficiency. To realize SNNs in hardware, spintronic neuron implementations can bring…

Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…

Ensuring high performance, while meeting the power budget is a challenging task as the world is moving towards next-generation computing. Researchers and designers are in search of new solutions for efficient computation. Spintronics…

This work presents an equivalent circuit model for Magnetic Tunnel Junctions (MTJs) that accurately captures their magnetization dynamics and electrical behavior. Implemented in LTspice, the model is validated against direct numerical…

In this manuscript we propose a theoretical model where the magneto-resistive elements are modelled as fluctuating resistances to correct the output voltage noise of tunnel magnetic junction (MTJ) from standard electronic circuits. This…

The quest for highly efficient cognitive computing has led to extensive research interest for the field of neuromorphic computing. Neuromorphic computing aims to mimic the behavior of biological neurons and synapses using solid-state…

Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated.…

Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresistance (TMR) make state-of-the-art MRAM interfaces…

The realistic modeling of STT-MRAM for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments require a full description of stochastic switching processes in state of the art STT-MRAM. Here, we derive an…

Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs…

Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy…

Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer…

Today's high-performance architectures are increasingly constrained by data movement latency and energy overhead, as the slowdown of single-core performance scaling coincides with the rise of highly data-intensive workloads. In-memory…

A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off…

The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is…