Related papers: HVPE growth of corundum-structured $\alpha$-Ga$_2$…
In metal organic vapor phase epitaxy of GaN, the growth mode is sensitive to reactor temperature. In this study, V-pit-shaped GaN has been grown on normal c-plane cone-patterned sapphire substrate by decreasing the growth temperature of…
Metal chalcogenides are promising layered topological materials, yet their electronic performance is often limited by parasitic bulk conduction arising from defects that introduce excess carriers and shift the Fermi level out of the…
BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film…
Nanostrucured Europium oxide and hydroxide films were obtained by pulsed Nd:Yag (532 nm) laser ablation of an Europium metallic target, in the presence of a 1 mbar Helium buffer atmosphere. Both the produced film and the ambient plasma were…
We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 $\mu$m thick $\beta$-Ga$_2$O$_3$ films with electron concentrations in the 10$^{15}$ cm$^{-3}$ range and record-high room temperature Hall…
Gallium oxide (Ga$_2$O$_3$) is a wide-bandgap semiconductor with exceptional electrical and optical properties, making it a promising material for optoelectronic and sensing applications. In this work, we demonstrate for the first time the…
This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron…
Chromia (Cr2O3) has been extensively explored for the purpose of developing widespread industrial applications, owing to the convergence of a variety of mechanical, physical and chemical properties in one single oxide material. Various…
Thin films of the wide band gap semiconductor $\beta$-Ga$_2$O$_3$ have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on…
Thick (~50 nm) films of Hf were evaporated onto bare and oxidized Si(001) samples, and thin (~monolayer) films of Hf were evaporated onto clean Si(001)-(2x1) surfaces. Upon annealing to 1000$^/circ$C, films of HfSi2 were formed after…
The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic functionalities of group-IV semiconductors (Ge and SiGe). The…
Phase transitions in metastable $\alpha$-, $\kappa(\epsilon)$-, and $\gamma$-Ga$_2$O$_3$ films to thermodynamically stable $\beta$-Ga$_2$O$_3$ during annealing in air, N$_2$, and vacuum have been systematically investigated via in-situ…
In this work, we report on the growth of high-mobility $\beta$-Ga$_2$O$_3$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature…
Using quantum Monte Carlo we have studied the superfluid density of the first layer of $^4$He and H$_2$ adsorbed on graphene and graphite. Our main focus has been on the equilibrium ground state of the system, which corresponds to a…
Sapphire and rubies (undoped and Cr-doped $\alpha$-Al$_2$O$_3$ single crystals) have been deformed in compression at temperatures lower than those previously used in studies of dislocations in the basal slip plane (see part I). Above…
We employed graphene as a patternable template to protect the intrinsic surface states of thin films of topological insulators (TIs) from environment. Here we find that the graphene provides high-quality interface so that the Shubnikov de…
High quality semipolar and nonpolar GaN is crucial in achieving high-performance GaN-based optoelectronic devices, yet it has been very challenging to achieve large-area wafers that are free of basal-plane stacking faults (BSFs). In this…
Multiferroic BiFeO3 (BFO) / La0.7Sr0.3MnO3 heterostructured thin films were grown by pulsed laser deposition on polished spark plasma sintered LaAlO3 (LAO) polycrystalline substrates. Both polycrystalline LAO substrates and BFO films were…
We report on sexithiophene films, about 150nm thick, grown by thermal evaporation on single crystal oxides and, as comparison, on Si/SiO2. By heating the entire deposition chamber at 100 C we obtain standing-up oriented molecules all over…
Gd-rich gadolinium scandate (Gd2-xScxO3) was deposited by high-pressure sputtering on (100) silicon by alternating the deposition of lower than 0.5 nm thick films of its binary components: Sc2O3 and Gd2O3. The formation of the ternary oxide…