Related papers: HVPE growth of corundum-structured $\alpha$-Ga$_2$…
N-polar AlN epilayers were grown on the N-face of single crystal bulk AlN substrates by plasma assisted molecular beam epitaxy (PA-MBE). A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature…
We carried out quartz crystal microbalance experiments of a 5 MHz AT-cut crystal for superfluid 4He films on Grafoil (exfoliated graphite) with a small amount of 3He up to 0.40 atoms/nm2. We found that the mass decoupling from oscillating…
Gallium nitride nanowires were grown on c-plane, r-plane and m-plane sapphire substrates in a showerhead metalorganic chemical vapor deposition system using nickel catalyst with trimethylgallium and ammonia as precursors. We studied the…
The growth and characterization of Bismuth (Bi) substituted YIG (Bi-YIG, Bi0.1Y2.9Fe5O12) thin films are reported. Pulsed laser deposited (PLD) films with thicknesses ranging from 20 to 150 nm were grown on Gadolinium Gallium Garnet…
As an organic semiconductor and a prototypical acceptor molecule in organic photovoltaics, C$_{60}$ has broad relevance to the world of organic thin film electronics. Although highly uniform C$_{60}$ thin films are necessary to conduct…
Magnetic properties of CoMnGe thin films of different thicknesses (13, 34, 55, 83, 100 and 200 nm), grown by RF sputtering at 400{\deg}C on single crystal sapphire substrates, were studied using vibrating sample magnetometry (VSM) and…
In spite of much work on topological insulators (TIs), systematic experiments for TI/TI heterostructures remain absent. We grow a high quality heterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs of Bi2Te3 and compare…
Ultrawide-bandgap (UWBG) semiconductors, such as GeO$_2$, are gaining significant attention for their potential in high-performance applications, particularly in piezoelectric devices. Despite extensive research, a comprehensive…
10 nm and 50 nm Co$_{2}$FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according…
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading…
Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended…
Gallium oxide (Ga2O3) can be crystallized in several polymorphs exhibiting different physical properties. In this work, polymorphic structures consisting of the cubic defective spinel (gamma) film on the top of the monoclinic (beta)…
The present work reports the study of the optimized processing conditions of Bi0.9La0.1Fe0.9Mn0.1O3 thin films, grown by RF sputtering on platinum metalized silicon substrates. The combination of deposition at relatively low substrate…
Epitaxial films of heavy fermion CeCu2Ge2 and CeFe2Ge2 are grown on DyScO3 and MgO substrates using molecular beam epitaxy. The growth begins via island nucleation leading to a granular morphology. The grains grow flat with c-axis…
Antiferromagnetic Mn$_{3}$Ge with a non-collinear Kagome structures present exciting prospects for exploring Berry curvature driven anomalous Hall effects (AHE). Despite substantial progress in bulk systems, the synthesis of crystalline…
Poly (3-hexylthiophene) (P3HT) was thermally evaporated and deposited in vacuum. Infrared spectroscopy was used to confirm that the thin films were indeed P3HT, and showed that in-situ thermal evaporation provides a viable route for…
Recently high density (HD) nonmagnetic (NM) cobalt has been discovered in a cobalt thin film, grown on Si(111). This cobalt film had a natural cobalt oxide at the top. The oxide layer forms when the film is taken out of the electron-beam…
The present paper is dedicated to the structural study of crystallographic peculiarities appearing in epitaxial films of metastable epsilon iron oxide ($\varepsilon$-Fe$_2$O$_3$) grown by pulsed laser deposition onto a semiconductor GaN…
We report on the growth of epitaxial ZnO thin films and ZnO based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultra-violet laser beam…
We have grown lead iron niobate thin films with composition Pb(Fe1/2Nb1/2)O3 (PFN) on (0 0 1) SrTiO3 substrates by pulsed laser deposition. The influence of the deposition conditions on the phase purity was studied. Due to similar…