Related papers: Enhanced GeSn Microdisk Lasers Directly Released o…
Exploring new topological materials with large topological nontrivial bandgaps and simple composition is attractive for both theoretical investigation and experimental realization. Recently alpha tin ({\alpha}-Sn) has been predicted to be…
Tunable lasers emitting at a 2-3 $\mu$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic…
This paper explores the potential of cryogenic semiconductor computing and superconductor electronics as promising alternatives to traditional semiconductor devices. As semiconductor devices face challenges such as increased leakage…
Lead-free BaTi0.89Sn0.11O3 (BTSn) ceramic was elaborated via a solid-state reaction method and its dielectric, ferroelectric, energy storage, electromechanical as well as electrocaloric properties were investigated at 25 kV/cm. Pure…
Stabilized FeSe thin films in ambient pressure with tunable superconductivity would be a promising candidate for superconducting electronic devices yet its superconducting transition temperature (Tc) is below 10 K in bulk materials. By…
We present a painless, almost-free upgrade to present extended cavity diode lasers (ECDLs), which improves the long term mode-hop free performance by stabilizing the resonance of the internal cavity to the external cavity. This…
The novel combination of a strongly-resonant optical metasurface with the MoS$_2$/WSe$_2$ hetero-bilayer is proposed for efficient free-space lasing enabled by the enhanced coupling between the optical and matter (exciton) states. The…
Short-wave infrared (SWIR) imaging arrays have demonstrated great potential in applications spanning from military to civilian consumer electronics. However, the current focal plane arrays (FPAs), which are based on compound semiconductors,…
We theoretically show that laser recoil heating in free-space levitated optomechanics can be arbitrarily suppressed by shining squeezed light onto an optically trapped nanoparticle. The presence of squeezing modifies the quantum…
We have achieved stimulated laser cooling of thermal rubidium atomic beams on a silicon chip. Following pre-collimation via a silicon microchannel array, we perform beam brightening via a blue-detuned optical molasses. Owing to the small…
Optically levitated mechanical sensors promise isolation from thermal noise far beyond what is possible using flexible materials alone. One way to access this potential is to apply a strong optical trap to a minimally supported mechanical…
$\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$ alloys were grown on Ge buffer layers at ultra-low temperature using reactions of $\rm SnH_{4}$ and $\rm GeH_{3}Cl$ for the first time. The latter is a newly introduced CVD source designed for epitaxial…
Silicon lasers have been the most challenging element for the monolithic integrated Si photonics. Here we report the first successful all-Si laser at room temperature based on silicon nanocrystals (Si NCs) with high optical gains. The…
Studying thermal transport at the nanoscale poses formidable experimental challenges due both to the physics of the measurement process and to the issues of accuracy and reproducibility. The laser-induced transient thermal grating (TTG)…
Excitonic stimulated emission provides a promising mechanism and route to achieve low-threshold semiconductor lasers for micro-nano optoelectronic integrations. However, excitonic stimulated emission from quantum structure-free…
Room and high temperature mechanical properties of reactive magnetron sputtered TaSiN coatings were measured using nanoindentation (between 25C and 500C). Fracture toughness was also evaluated at a similar temperature range using the…
Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming. However, the prohibitively high cost associated with these…
The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device.…
Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over existing III-V devices. Although coherent electron transport effects are known to be important in QCLs, they have never been considered in Si-based device…
Ultrafast laser systems operating with high-average power in the wavelength range from 1.9 um to 3 um are of interest for a wide range of applications for example in spectroscopy, material processing and as drivers for secondary sources in…