Related papers: Enhanced GeSn Microdisk Lasers Directly Released o…
The appeal of lasers can be attributed to both their ubiquitous applications and their role as model systems for elucidating nonequilibrium and cooperative phenomena. Introducing novel concepts in lasers thus has a potential for both…
Semiconductor nanolasers based on micro disks, photonic crystal cavities, and metallo-dielectric nanocavities have been studied during the last decade for on-chip light source applications. However, practical realization of low threshold,…
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the…
A laser threshold is determined by the gain condition, which has been progressively reduced by the use of heterostructures and of quantum confinement. The polariton laser is the ultimate step of this evolution: coherent emission is obtained…
We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e. due to electronic transport only) of single-crystalline bulk $n$-type silicon-germanium alloys vs Ge composition, temperature,…
Solution-processed organic-inorganic lead halide perovskites have recently emerged as promising gain media for tunable semiconductor lasers, and have come to rival inorganic III-V group semiconductors as the material candidate for…
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is…
Separate absorption charge multiplication germanium tin on silicon avalanche photodiode offers a viable solution to achieve CMOS compatible, high sensitivity detection technology in SWIR or extended SWIR range, leveraging the excellent…
Laser cooling of semiconductors has been an elusive goal for many years, and while attempts to cool the narrow gap semiconductors such as GaAs are yet to succeed, recently, net cooling has been attained in a wider gap CdS. This raises the…
A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain…
We investigate the interaction of tin alloying with tensile strain and n-type doping for improving the performance of a Ge-based laser for on-chip optical interconnects. Using a modified tight-binding formalism that incorporates the effect…
Non-thermal laser induced spin excitations, recently discovered in conventional oxide and metal ferromagnets, open unprecedented opportunities for research and applications of ultrafast optical manipulation of magnetic systems.…
There is a general trend of downscaling laser cavities, but with high integration and energy densities of nanocavity lasers, signifi-cant thermal issues affect their operation. The complexity of geometrical parameters and the various…
Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier…
The current work describes a novel method of growing thin films of stable crystalline ST12-Ge, a high pressure polymorph of Ge, on Si substrate by a non-equilibrium VLS-technique. The study explores the scheme of band engineering of ST12-Ge…
Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN…
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits given by quantum mechanics. Thus, two-dimensional (2D) structures appear as one of the best solutions to meet the…
Controlling the growth kinetics from the vapor phase has been a powerful paradigm enabling a variety of metastable epitaxial semiconductors such as Sn-containing group IV semiconductors (Si)GeSn. In addition to its importance for emerging…
The thermal stability and structural evolution of a GaN high-electron-mobility transistor (HEMT) heterostructure grown on a Si (111) substrate were investigated using in situ high-temperature X-ray diffraction (HT-XRD), reciprocal space…
Sensitive and cost-effective Group-IV short-wave infrared (SWIR) photodetectors (PDs), compatible with complementary metal-oxide semiconductor (CMOS) processes, are crucial for various emerging applications. Here, we developed a black GeSn…