Related papers: Characterization of self-heating in cryogenic high…
High Electron Mobility Transistors (HEMTs) are most suitable for harsh environments as they operate reliably under extreme conditions such as high voltages, high temperatures, radiation exposure and corrosive atmospheres. In this article,…
Much of the exotic functionality of prime interest in quantum materials emerges from structural and electronic ground states that can only be accessed at cryogenic temperatures. Understanding device operation therefore requires structural…
Advances in analytical scanning transmission electron microscopy (STEM) and microelectronic mechanical systems (MEMS) based microheaters have enabled in-situ materials characterization at the nanometer scale at elevated temperature. In…
When a quantum dot is subjected to a thermal gradient, the temperature of electrons entering the dot can be determined from the dot's thermocurrent if the conductance spectrum and background temperature are known. We demonstrate this…
We present an exhaustive theoretical analysis of charge and thermoelectric transport in a normal metal-ferromagnetic insulator-superconductor (NFIS) junction, and explore the possibility of its use as a sensitive thermometer. We…
Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined. The…
Microwave devices capable of near-quantum-limited signal processing are essential components in the toolbox of solid-state quantum technologies. The manipulation and readout of single-photon microwave signals through amplifiers, mixers,…
Topological materials hold great promise for developing next-generation devices with transport properties that remain resilient in the presence of local imperfections. However, their susceptibility to thermal noise has posed a major…
We report experimental demonstration of the feasibility of reaching temperatures below 1 mK using cryogen-free technology. Our prototype system comprises an adiabatic nuclear demagnetisation stage, based on hyperfine-enhanced nuclear…
Signal to noise ratios (SNR) in magnetic resonance microscopy images are limited by acquisition times and the decreasing number of spins in smaller voxels. Significant SNR gains from cooling of the RF receiver are only realized when the…
For $\beta$-$\mathrm{Ga_2O_3}$ only little information exist concerning the thermal properties, especially the thermal conductivity $\lambda$. Here, the thermal conductivity is measured by applying the electrical 3$\omega$-method on…
In the pursuit of quantum computing, solid-state quantum systems, particularly superconducting ones, have made remarkable advancements over the past two decades. However, achieving fault-tolerant quantum computing for next-generation…
The design of cryogenic liquid storage solutions requires accurate methods for estimating heat ingress, from the material level to the tank level. For insulation materials, thermal performance is usually measured using ambient conditions…
Coulomb blockade thermometers (CBTs) are versatile and, in principle, primary thermometers operating down to the micro-Kelvin range but bias heating spoils the thermometry and the primary mode. Here, we introduce a method to extract the CBT…
Thermal transport in low-dimensional semiconductors is crucial for advancing thermal management in nanoelectronics, quantum devices, and thermoelectric devices. Recent molecular dynamics (MD) studies have identified a nonmonotonic…
The occurrence of thermal transport phenomena is widespread, exerting a pivotal influence on the functionality of diverse electronic and thermo-electric energy-conversion devices. The traditional first-principles theory governing the…
Cryogenic characterization of transition-edge sensor (TES) bolometers is a time- and labor-intensive process. As new experiments deploy larger and larger arrays of TES bolometers, the testing process will become more of a bottleneck. Thus…
The effect of electron-phonon scattering processes over the thermoelectric properties of extrinsic graphene was studied. Electrical and thermal resistivity, as well as the thermopower, were calculated within the Bloch theory approximations.…
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices…
This paper describes the setup and the results of the direct on-wafer measurements of a FET noise parameters obtained with a source-pull method at temperatures down to T=4K and in the 5-12 GHz frequency range. The setup consists of a…