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Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can become an excellent host material for an entirely new…
A theoretical analysis is presented on possible effects of disorder by dopants in high-temperature superconducting cuprate perovskites, to define their basic spectra of spin and electronic excitations, and the subsequent observable…
Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can be tuned either by field-effect or doping. We investigated…
Photonic quantum technologies promise to repeat the success of integrated nanophotonic circuits in non-classical applications. Using linear optical elements, quantum optical computations can be performed with integrated optical circuits and…
Within the framework of the kinetic energy driven superconducting mechanism, the doping dependence of the electromagnetic response in the electron-doped cuprate superconductors is studied. It is shown that although there is an electron-hole…
Recent improvements in materials growth and fabrication techniques may finally allow for superconducting semiconductors to realize their potential. Here we build on a recent proposal to construct superconducting devices such as wires,…
Optical spectroscopy and quantum control of semiconductor quantum dots has become a vivid field of research. The recent progress in both theory and experiment is reviewed, with emphasis on theoretical and computational concepts.
The recent experiments revealed a remarkable possibility for the absence of the disparity between the phase diagrams of the electron- and hole-doped cuprate superconductors, while such an aspect should be also reflected in the dressing of…
In this work, the electronic and optical properties of a Nitrogen (N) or a Boron (B) doped BeO monolayer are investigated in the framework of density functional theory. It is known that the band gap of a BeO monolayer is large leading to…
Superconducting circuits are exceptionally flexible, enabling many different devices from sensors to quantum computers. Separately, epitaxial semiconductor devices such as spin qubits in silicon offer more limited device variation but…
The experimental observation of superconductivity in LaFeAsO appearing on doping is analyzed with the group-theoretical approach that evidently led in a foregoing paper (J. Supercond 24:2103, 2011) to an understanding of the cause of both…
The charge dynamics in weakly hole doped high temperature superconductors is studied in terms of the accurate numerical solution to a model of a single hole interacting with a quantum lattice in an antiferromagnetic background, and accurate…
A simple model of cuprate superconductivity with an electron spectrum prepared by doping is developed. The pair-transfer interaction couples the itinerant band with two components ("hot'' and "cold'') of the defect subsystem. There are…
Using angle-resolved photoemission spectroscopy, we studied the electronic structure of NaFe$_{1-x}$Co$_x$As from an optimally doped superconducting compound ($x=0.028$) to a heavily overdoped non-superconducting one ($x=0.109$). Similar to…
Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding…
High-temperature superconductivity occurs as copper oxides are chemically tuned to have a carrier concentration intermediate between their metallic state at high doping and their insulating state at zero doping. The underlying evolution of…
In this work, we investigate the electrical conductivity of carbon nanotubes (CNTs), with a particular focus on the effects of doping. Using a first-principles approach, we study the electronic structure, phonon dispersion, and…
Dispersed impurities in diamond present a flourishing platform for research in quantum informatics, spintronics and single phonon emitters. Based on the vast pool of experimental and theoretical work describing impurity atoms in diamond, we…
Vapor growth of semiconductors is analyzed using recently obtained dependence of the adsorption energy on the electron charge transfer between the surface adsorbed species and the bulk [Krukowski et al. J. Appl. Phys. 114 (2013) 063507,…
We propose using Quantum Dots as novel targets to probe sub-GeV dark matter-electron interactions. Quantum dots are nanocrystals of semiconducting material, which are commercially available, with gram-scale quantities suspended in…