Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO2 interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.
@article{arxiv.1111.4238,
title = {Dopant metrology in advanced FinFETs},
author = {G. P. Lansbergen and R. Rahman and G. C. Tettamanzi and J. Verduijn and L. C. L. Hollenberg and G. Klimeck and S. Rogge},
journal= {arXiv preprint arXiv:1111.4238},
year = {2011}
}