Related papers: Silicon Donor Array as a Disordered One-Dimensiona…
We construct a model to study the localization properties of nanowires of dopants in silicon (Si) fabricated by precise ionic implantation or STM lithography. Experiments have shown that Ohm's law holds in some cases, in apparent defiance…
Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous…
Donors in silicon are now demonstrated as one of the leading candidates for implementing qubits and quantum information processing. Single qubit operations, measurements and long coherence times are firmly established, but progress on…
We provide here a roadmap for modeling silicon nano-devices with one or two group V donors (D). We discuss systems containing one or two electrons, that is, D^0, D^-, D_2^+ and D_2^0 centers. The impact of different levels of approximation…
Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics…
Chains and arrays of phosphorus donors in silicon have recently been used to demonstrate dopant-based quantum simulators. The dopant disorder present in fabricated devices must be accounted for. Here, we theoretically study transport…
Atomic arrays can exhibit collective light emission when the transition wavelength exceeds their lattice spacing. Subradiant states take advantage of this phenomenon to drastically reduce their overall decay rate, allowing for long-lived…
Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real vacuum, electrons in silicon occupy quantum superpositions…
The ability to transport quantum information across some distance can facilitate the design and operation of a quantum processor. One-dimensional spin chains provide a compact platform to realize scalable spin transport for a solid-state…
Spin qubits in silicon donors offer a promising platform for quantum computing due to their long coherence times and semiconductor compatibility. However, scaling donor-based spin qubits in silicon is fundamentally challenged by frequency…
Atomically precise placement of dopants in Si permits creating substitutional P nanowires by design. High-resolution images show that these wires are few atoms wide with some positioning disorder with respect to the substitutional Si…
Using the effective mass theory and the multi-valley envelope function representation, we have developed a theoretical framework for computing the single-electron electronic structure of several phosphorus donors interacting in an arbitrary…
Electronic and nuclear spins of shallow donors in Silicon are attractive candidates for qubits in quantum computer proposals. Shallow donor exchange gates are frequently invoked to preform two-qubit operations in such proposals. We study…
We have studied the peculiarities of electron transport in one-dimensional (1D) disordered chain at the presence of correlations between on-site interaction and tunneling integrals. In the considered models the disorder in host-lattice…
Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic-scale objects represents a new and…
We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions…
Proposed Silicon-based quantum computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing infrastructure of…
Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…
The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the…