Related papers: Silicon Donor Array as a Disordered One-Dimensiona…
Arrays of coupled superconducting qubits are analog quantum simulators able to emulate a wide range of tight-binding models in parameter regimes that are difficult to access or adjust in natural materials. In this work, we use a…
Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…
We present a unified approach for calculating the properties of shallow donors inside or outside heterostructure quantum wells. The method allows us to obtain not only the binding energies of all localized states of any symmetry, but also…
Donor spin in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange…
Quantum dots in silicon are promising candidates for implementation of solid-state quantum information processing. It is important to understand the effects of the multiple conduction band valleys of silicon on the properties of these…
Optomechanical arrays are a promising future platform for studies of transport, many-body dynamics, quantum control and topological effects in systems of coupled photon and phonon modes. We introduce disordered optomechanical arrays,…
Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances…
Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the central-cell correction is studied by implementing both the…
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange…
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy…
We explore the interplay of disorder and topological phenomena in honeycomb lattices of atoms coupled by the electromagnetic field. On the one hand, disorder can trigger transitions between distinct topological phases and drive the lattice…
Atomic engineering in a solid-state material has the potential to functionalize the host with novel phenomena. STM-based lithographic techniques have enabled the placement of individual phosphorus atoms at selective lattice sites of silicon…
A tight-binding parametrization for silicon, optimized to correctly reproduce effective masses as well as the reciprocal space positions of the conduction-band minima, is presented. The reliability of the proposed parametrization is…
We study the effect of disorder in a holographic superconductor by introducing a quasi-periodic chemical potential. When the condensation of the superconductor is sufficiently small compared with the strength of disorder, we find that there…
In a dissipationless linear lattice, spatial disorder or incommensurate modulation induce localization of the lattice eigenstates and block spreading of wave packets. Additionally, incommensurate arrays allow for the metal-insulator…
The scattering of conduction electrons off neutral donors depends sensitively on the relative orientation of their spin states. We present a theory of spin-dependent scattering in the two dimensional electron gas (2DEG) of field effect…
We study the effect of disorder on the particle density evolution in a classical Hamiltonian driven lattice setup. If the disorder is localized within a finite sub-domain of the lattice, the emergence of strong tails in the density…
Recent experimental efforts have led to considerable interest in donor-based localized electron spins in Si as viable qubits for a scalable silicon quantum computer. With the use of isotopically purified $^{28}$Si and the realization of…
One-dimensional quantum emitters with chiral couplings can exhibit nonreciprocal decay channels, along with light-induced dipole-dipole interactions mediated via an atom-waveguide interface. When the position disorders are introduced to…
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by…