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We implemented a nanoelectronic interface between graphene field effect transistors (FETs) and soluble proteins. This enables production of bioelectronic devices that combine functionalities of the biomolecular and inorganic components. The…

Mesoscale and Nanoscale Physics · Physics 2015-06-03 Ye Lu , Mitchell B. Lerner , Zhengqing John Qi , Joseph J. Mitala , Jong Hsien Lim , Bohdana M. Discher , A. T. Charlie Johnson

Two-dimensional materials, specifically transition metal dichalcogenides, for highly sensitive gas sensing are emerging as effective detection technology. Platinum ditelluride (PtTe2) is an intriguing material in the realm of field-effect…

Applied Physics · Physics 2025-05-19 A. Shahid , J. Gum , R. Unnithan , S. Mokkapati

On-chip waveguide sensors have attracted significant attention recently due to their potential for high level integration. However, so far on-chip gas sensing based on traditional laser absorption spectroscopy has demonstrated low detection…

We fabricate and characterize a radio-frequency semiconductor point-contact electrometer (RF-PC) analogous to radio-frequency single-electron transistors [RF-SETs, see Science {\bf 280}, 1238 (1998)]. The point contact is formed by surface…

Mesoscale and Nanoscale Physics · Physics 2007-08-21 Hua Qin , David A. Williams

Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils…

Electric field detection has been widely utilized in many fields such as scientific research and integrated circuits. To enhance the tuning sensitivity of E-field sensor, in this paper, we theoretically proposed a highly sensitive E-field…

Optics · Physics 2022-12-21 Zhijin Huang , Junzhong Wang , Lifang Yuan , Kaixiang Shen , Qianqian Li , Juan Wang

The need for ever-faster information processing requires extremely small devices operating at frequencies approaching the terahertz and petahertz regimes. For the diagnostics of such devices, researchers need a spatiotemporal tool that…

Applied Physics · Physics 2024-01-30 Maximilian Mattes , Mikhail Volkov , Peter Baum

In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor…

Two-dimensional (2D) materials have been used extensively in various fields due to their unique physical and chemical properties. Among their diverse applications, field-effect transistor biosensors (bio-FETs) promise a brilliant prospect…

Medical Physics · Physics 2022-08-24 Foad Ghasemi , Abdollah Salimi

Scalable methods for improving the performance and stability of a field-effect transistor (FET) based on two-dimensional materials are crucial for its real applications. A scalable method of encapsulating the exfoliated MoS$ _{2} $ on SiO$…

Materials Science · Physics 2024-03-12 Santu Prasad Jana , Shivangi , Suraina Gupta , Anjan K. Gupta

Field Effect Transistors (FETs) are ubiquitous in electronics. As we scale FETs to ever smaller sizes, it becomes natural to ask how small a practical FET might be. We propose and analyze an atomically precise molecular FET (herein referred…

Emerging Technologies · Computer Science 2025-05-12 Ralph C. Merkle , Robert A. Freitas , Damian G. Allis

A sensor that integrates high sensitivity micro-Hall effect magnetometry and high-frequency electron paramagnetic resonance spectroscopy capabilities on a single semiconductor chip is presented. The Hall-effect magnetometer was fabricated…

Strongly Correlated Electrons · Physics 2009-11-13 H. M. Quddusi , C. M. Ramsey , J. C. Gonzalez-Pons , J. J. Henderson , E. del Barco , G. de Loubens , A. D. Kent

The maturity of the chemical vapor deposition graphene-based device processing has increased from chip level demonstrations to wafer-scale fabrication in the past few years. Due to this wafer-scale, electrical characterization and analysis…

Mesoscale and Nanoscale Physics · Physics 2026-02-20 Anton Murros , Miika Soikkeli , Anni Virta , Arantxa Maestre , Leire Morillo , Alba Centeno , Amaia Zurutuza , Olli-Pekka Kilpi

Gas sensors built using two-dimensional (2D) MoS2 have conventionally relied on a change in field-effect-transistor (FET) channel resistance or a change in Schottky contact/pn homojunction barrier. This report demonstrates, for the first…

Applied Physics · Physics 2020-09-25 Sushovan Dhara , Himani Jawa , Sayantan Ghosh , Abin Varghese , Saurabh Lodha

In this study, we propose a measurement technique for evaluating ferroelectric polarization characteristics in ferroelectric field-effect transistors (FeFETs). Different from standard metal/ferroelectric/metal capacitors, the depletion and…

Applied Physics · Physics 2020-06-17 Kasidit Toprasertpong , Kento Tahara , Mitsuru Takenaka , Shinichi Takagi

Portable and cost-effective gas sensors are gaining demand for a number of environmental, biomedical and industrial applications, yet current devices are confined into specialized labs and cannot be extended to general use. Here, we…

Instrumentation and Detectors · Physics 2020-04-10 Giuseppe Antonacci , Jeroen Goyvaerts , Haolan Zhao , Bettina Baumgartner , Bernhard Lendl , Roel Baets

Wireless electromagnetic sensing is a passive, non-destructive technique for measuring physical and chemical changes through permittivity or conductivity changes. However, the readout is limited by the sensitivity of the materials, often…

Systems and Control · Electrical Eng. & Systems 2024-09-06 Benjamin King , Nikolas Bruce , Mahmoud Wagih

Simpler and more rapid approaches for therapeutic drug-level monitoring are highly desirable to enable use at the point-of-care. We have developed an all-electronic approach for detection of the HIV drug tenofovir based on scalable…

Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of {\alpha}-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs…

We show that the sensitivity of antenna-coupled field-effect transistors (FETs) to terahertz (THz) radiation improves continuously with decreasing temperature. The noise-equivalent power (NEP) of 540 GHz patch-antenna-coupled FETs decreases…

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