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More physics at the boundaries of a topological lattice remains to be explored for future applications of topological edge states. This work investigates the stability of topological edge states in the presence of a moving impurity. By…

Mesoscale and Nanoscale Physics · Physics 2026-01-23 Baikang Yuan , Jiangbin Gong

We present a systematic investigation of the edge states of two-dimensional {\alpha}-bismuthene ({\alpha}-Bi) structures self-assembled on HOPG substrates, using scanning tunnelling microscopy and scanning tunnelling spectroscopy. The…

Topologically nontrivial materials host protected edge states associated with the bulk band inversion through the bulk-edge correspondence. Manipulating such edge states is highly desired for developing new functions and devices practically…

Topological insulators have been studied intensively over the last decades. Among these materials, three-dimensional (3D) zirconium pentatelluride (ZrTe$_5$) stands out as one of the most intriguing for both theoretical and experimental…

Materials Science · Physics 2025-08-04 Chao Chen Ye , Yuliia Kreminska , Jianting Ye , Jagoda Sławińska

We address the co-existence of massless and massive topological edge states at the interface between two materials with different topological phases. We modify the well known Bernevig-Hughes-Zhang model to introduce a smooth function…

Mesoscale and Nanoscale Physics · Physics 2020-02-26 Tineke L. van den Berg , M. Reyes Calvo , Dario Bercioux

CdTe is II-VI semiconductor material with excellent characteristics and has demonstrated promising potential for application in the photovoltaic field. The electronic properties of Cd43Te28 with microporous structures have been investigated…

Materials Science · Physics 2023-06-28 Yixin Li , Wei Xiong , Lei Li , Zhuoming Zhou , Chuang Yao , Zhongkai Huang , Maolin Bo

Bismuth-chalchogenides are model examples of three-dimensional topological insulators. Their ideal bulk-truncated surface hosts a single spin-helical surface state, which is the simplest possible surface electronic structure allowed by…

Based on first-principles and tight-binding calculations, we report that the transport properties of topological edge states of zigzag Bi(111) nanoribbon can be significantly tuned by H edge adsorption. The Fermi velocity is increased by…

Materials Science · Physics 2014-05-15 Z. F. Wang , Li Chen , Feng Liu

We report an atomic-scale characterization of ZrTe$_5$ by using scanning tunneling microscopy. We observe a bulk bandgap of ~80 meV with topological edge states at the step edge, and thus demonstrate ZrTe$_5$ is a two dimensional…

Bulk-edge correspondence, with quantized bulk topology leading to protected edge states, is a hallmark of topological states of matter and has been experimentally observed in electronic, atomic, photonic, and many other systems. While…

We present our angle resolved photoelectron spectroscopy (ARPES) and density functional theory results on quaternary topological insulator (TI) BiSbTe1.25Se1.75 (BSTS) confirming the non-trivial topology of the surface state bands (SSBs) in…

Materials Science · Physics 2023-10-31 H. Lohani , P. Mishra , A. Banerjee , K. Majhi , R. Ganesan , U. Manju , D. Topwal , P. S. Anil Kumar , B. R. Sekhar

Transfer matrix methods and intersection theory are used to calculate the bands of edge states for a wide class of periodic two-dimensional tight-binding models including a sublattice and spin degree of freedom. This allows to define…

Mathematical Physics · Physics 2016-10-28 Julio Cesar Avila , Hermann Schulz-Baldes , Carlos Villegas-Blas

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples, bulk…

Materials Science · Physics 2018-05-02 Prosper Ngabonziza , Yi Wang , Alexander Brinkman

Structural, resistivity, thermoelectric power and magneto-transport properties of Cu doped Bi2Te3 topological insulators have been investigated. The occurrence of the tuning of charge carriers from n type to p type by Cu doping at Te sites…

Materials Science · Physics 2016-09-22 Abhishek Singh , Rahul Singh , A. Lakhani , T. Patel , G. S. Okram , V. Ganeshan , A. K. Ghosh , Sandip Chatterjee

Using high-resolution angle-resolved photoemission spectroscopy, the electronic structure near the Fermi level and the topological property of the Bi(111) films grown on the Bi$_2$Te$_3$(111) substrate were studied. Very different from the…

Materials Science · Physics 2016-03-03 Meng-Yu Yao , Fengfeng Zhu , Lin Miao , C. Q. Han , Fang Yang , D. D. Guan , C. L. Gao , Canhua Liu , Dong Qian , Jin-feng Jia

Topological transition metal dichalcogenides (TMDCs) have attracted much attention due to its potential applications in spintronics and quantum computations. In this work, we systematically investigate the structural and electronic…

The complex electronic properties of $\mathrm{ZrTe_5}$ have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac semimetal phase. Here we report a comprehensive experimental…

Whether porosity can effectively improve thermoelectric performance is still an open question. Herein we report that thermoelectric performance can be significantly enhanced by creating porosity in n-type Mg3.225Mn0.025Sb1.5Bi0.49Te0.01,…

Topological insulators (TI) have attracted extensive research effort due to their insulating bulk states but conducting surface states. However, investigation and understanding of thermal transport in topological insulators, particularly…

Mesoscale and Nanoscale Physics · Physics 2017-02-07 Zhe Luo , Jifa Tian , Mithun Srinivasan , Yong P. Chen , Xianfan Xu

Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge…

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