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Spatiotemporal dynamics of electron-hole pairs locally excited in a silicon-on-insulator structure by indirect interband absorption are studied by measuring differential transmission caused by free-carrier absorption of a probe pulse tuned…
The dielectric loss of silicon nitride (Si$_3$N$_4$) limits the performance of microwave-frequency devices that rely on this material for sensing, signal processing, and quantum communication. Using superconducting resonant circuits, we…
The low temperature properties of glass are distinct from those of crystals due to the presence of poorly understood low-energy excitations. The tunneling model proposes that these are atoms tunneling between nearby equilibria, forming…
Waves and shocks traveling through the solar chromospheric plasma are influenced by its partial ionization and weak collisional coupling, and may become susceptible to multi-fluid effects, similar to interstellar shock waves. In this study,…
Thermoelectric cooling based on the Peltier effect requires high-performance materials near room temperature. In this work, Bi2Te2.6Se0.4 synthesized by melting-hot pressing followed by 100 h annealing (MT-HP-AN) at 723 K exhibits markedly…
Among the large class of Heusler compounds, Co2CrAl is predicted to be 100 % spin polarized and is hence, a potential candidate for application in spintronics. So far, the predicted properties have not been experimentally realized which may…
Annealing of crystalline multilayers composed of two miscible elements usually causes interfacial mixing of the constituent atoms, possibly leading to the formation of binary alloys at the interfaces. Magnetron sputtered c-Ni/a-Zr…
Anharmonic decay rates are calculated for a realistic atomic model of amorphous silicon. The results show that the vibrational states decay on picosecond timescales and follow the two-mode density of states, similar to crystalline silicon,…
We report low-temperature measurements of dissipation in megahertz-range, suspended, single-crystal nanomechanical oscillators. At millikelvin temperatures, both dissipation (inverse quality factor) and shift in the resonance frequency…
Sensitive ac susceptibility measurements of a topological insulator, Bi$_2$Se$_3$ single crystal, using mutual two coil inductance technique (Ref. 32) shows coupling and decoupling of high conducting surface states. The coupling of the…
A Li-Al-O thin film materials library, deposited by inert magnetron sputtering and post-deposition annealing in O2 atmosphere, was used to study the effects of different annealing temperatures (300 to 850{\deg}C) and durations (1 min to 7…
Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary…
We study the conductivity of a strongly coupled striped superconductor using gauge/gravity duality (holography). The study is done analytically, in the large modulation regime. We show that the optical conductivity is inhomogeneous but…
We analyze the dephasing dynamics of an impurity coupled to an anharmonic environment. We show that a strong anharmonicity produces two different effects depending on the environment temperature: for high temperatures, the system suffers a…
We have studied damping in polycrystalline Al nanomechanical resonators by measuring the temperature dependence of their resonance frequency and quality factor over a temperature range of 0.1 - 4 K. Two regimes are clearly distinguished…
We consider layered superconductors with a flux lattice perpendicular to the layers and random columnar defects parallel to the magnetic field B. We show that the decoupling transition temperature Td, at which the Josephson coupling…
We have extended our experimentally constrained molecular relaxation technique (P. Biswas {\it et al}, Phys. Rev. B {\bf 71} 54204 (2005)) to hydrogenated amorphous silicon: a 540-atom model with 7.4 % hydrogen and a 611-atom model with 22…
The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to…
In the present work, HfO2 thin film (100nm) has been deposited by sputtering technique and annealed at various temperatures ranging from 400 to 1000\degree (in step of 200 \degree) in O2 ambient for 10 min. The samples have been…
The Hydrogenated Diamond Like Carbon (HDLC) thin films are deposited on Silicon substrate at room temperature using asymmetric capacitively coupled RF plasma with varying flow rates of methane. These films are undergone annealing at high…