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A scalable spin-based quantum processor requires a suitable semiconductor heterostructure and a gate design, with multiple alternatives being investigated. Characterizing such devices experimentally is a demanding task, with the full…
We discuss the choice and implementation of inter-valley potentials in the so-called two bands $\mathbf{k}\cdot\mathbf{p}$ model for the opposite $X$, $Y$ or $Z$ valleys of silicon. We focus on the description of valley splittings in…
We provide a microscopic theory for the Doppler velocimetry of spin propagation in the presence of spatial inhomogeneity, driving electric field and the spin orbit coupling in semiconductor quantum wells in a wide range of temperature…
Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silicon can be placed with atomic precision to address the…
In this paper, a detailed analysis of anisotropic effects on the phonon induced spin relaxation rate in III-V semiconductor quantum dots (QDs) is carried out. We show that the accidental degeneracy due to level crossing between the first…
Spin squeezed entanglement enables metrological precision beyond the classical limit. Understood through the lens of continuous symmetry breaking, dipolar spin systems exhibit the remarkable ability to generate spin squeezing via their…
We study the singlet-triplet relaxation due to the spin-orbit coupling assisted by the electron-phonon scattering in two-electron SiGe/Si/SiGe double quantum dots in the presence of an external magnetic field in either Faraday or Voigt…
Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key…
Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin resonance, we perform coherent control of both types of qubits,…
We review recent advances on the theory of spin qubits in nanostructures. We focus on four selected topics. First, we show how to form spin qubits in the new and promising material graphene. Afterwards, we discuss spin relaxation and…
We investigate a two-electron double quantum dot with both spin and valley degrees of freedom as they occur in graphene, carbon nanotubes, or silicon, and regard the 16-dimensional space with one electron per dot as a four-qubit logic…
We investigate the optical control possibilities of spin-valley qubit carried by single electrons localized in nanostructures of monolayer TMDs, including small quantum dots formed by lateral heterojunction and charged impurities. The…
Gate geometry and bias asymmetry can be used to engineer spin dynamics in gate-defined Ge hole quantum dots by reshaping the confinement potential and driving transitions between distinct confinement regimes. In this work, we show that…
Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real vacuum, electrons in silicon occupy quantum superpositions…
We consider the relaxation of a spin qubit in a quantum dot propagating as a whole in a one-dimensional semiconductor with hyperfine coupling. We show that this motion leads to qualitatively new features in this process compared to static…
Spin decoherence poses a significant challenge in molecular magnets, with the nuclear spin bath serving as a prominent source. Intriguingly, spin qubits at the clock transition exhibit remarkable insensitivity to the surrounding nuclear…
The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for…
Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with…
We consider a mechanism of spin decay for an electron spin in a quantum dot due to coupling to a nearby quantum point contact (QPC) with and without an applied bias voltage. The coupling of spin to charge is induced by the spin-orbit…
The authors investigate the magnetic field dependence of the energy splitting between low-lying valley states for electrons in a Si/SiGe quantum well tilted with respect to the crystallographic axis. The presence of atomic steps at the…