Related papers: Switching between relaxation hotspots and coldspot…
We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as…
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting…
A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…
We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot,…
Regardless of various material design strategies, experimentally achieving substantial and controllable valley splitting in Si/SiGe quantum wells remains a central challenge for ensuring high gate uniformity. This difficulty arises from…
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based…
Electron shuttling is emerging as a key enabler of scalable silicon spin-qubit quantum computing, but fidelities are limited by atomistic disorder. We introduce a multiscale simulation framework combining time-dependent finite-element…
We discuss the rate of relaxation of the total spin in the two-electron droplet in the vicinity of the magnetic field driven singlet-triplet transition. The total spin relaxation is attributed to spin-orbit and electron-phonon interactions.…
A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface…
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst…
We study the decoherence of a single electron spin in an isolated quantum dot induced by hyperfine interaction with nuclei for times smaller than the nuclear spin relaxation time. The decay is caused by the spatial variation of the electron…
We have studied the physical processes responsible for the spin -flip in GaAs quantum dots. We have calculated the rates for different mechanisms which are related to spin-orbit coupling and cause a spin-flip during the inelastic relaxation…
We study single and double quantum dots defined electrostatically within silicene. The spin-valley structure of the confined single- and two-electron system is determined and the effects of the intervalley scattering induced by the crystal…
Silicon spin qubits are marred by the valley degeneracy of the conduction band. In a nanodevice, the degeneracy is lifted by interfaces and alloy disorder, but the arising valley splitting is small, of order 100 $\mu$eV in Si/SiGe quantum…
We analyze spin splitting of the two-dimensional hole spectrum in strained asymmetric SiGe quantum wells (QWs). Based on the Luttinger Hamiltonian, we obtain expressions for the spin-splitting parameters up to the third order in the…
The valley splitting (VS) of a silicon quantum dot plays an important role for the performance and scalability of silicon spin qubits. In this work we investigate the VS of a SiGe/Si/SiGe heterostructure as a function of the size and…
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion…
Understanding how the orbital motion of electrons is coupled to the spin degree of freedom in nanoscale systems is central for applications in spin-based electronics and quantum computation. We demonstrate this coupling of spin and orbit in…
The decay of spin-valley states is studied in a suspended carbon nanotube double quantum dot via leakage current in Pauli blockade and via dephasing and decoherence of a qubit. From the magnetic field dependence of the leakage current,…
Long-range quantum communication for spin qubits is an important open problem. Here we study decoherence of an electron spin qubit that is being transported in a moving quantum dot. We focus on spin decoherence due to spin-orbit interaction…