Related papers: Ge thin-films with tantalum diffusion-barriers for…
The influence of nano-metal films on the Goos-Haenchen shift (GHS) is investigated. The films deposited at the total reflecting surface of a perspex prism/air have a sheet resistance varying between Z = 25 and 3 000 Ohm. A resonance-like…
The discovery of superconductivity at 39 K in magnesium diboride offers the possibility of a new class of low-cost, high-performance superconducting materials for magnets and electronic applications. With twice the critical temperature of…
$\alpha$-Tantalum ($\alpha$-Ta) is an emerging material for superconducting qubit fabrication due to the low microwave loss of its stable native oxide. However, hydrogen absorption during fabrication, particularly when removing the native…
We have found that the thin film aluminum structures shaped into a chain of micron sized islands connected by narrow isthmuses, can modify their electrical and structural properties under microwave radiation. As a result, at the temperature…
Significative enhance in magnetocaloric effect due to finite size and surface effects is reported in Terbium(Tb) thin films in the helimagnetic phase (corresponding to a temperature range from $T_C$=219 K to $T_N$=231 K), for external…
We report on the deposition of gallium oxide using microwave irradiation technique on III nitride epi layers. We also report on the first demonstration of a gallium oxide device, a visible blind deep UV detector, with GaN based…
Titanium nitride is an attractive material for a range of superconducting quantum-circuit applications owing to its low microwave losses, high surface inductance, and chemical stability. The physical properties and device performance,…
The interconnect half-pitch size will reach ~20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be > 4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy…
We demonstrate a suspended thin-film aluminum nitride (AlN) microbolometer for narrowband very long-wave infrared detection. The device uses a 100-nm-thick AlN membrane suspended above a Pt back reflector by a 1-um air gap. Resonant…
Gallium oxide is a wide-bandgap semiconductor which has been steadily growing in popularity due to its ultra-wide bandgap, suitability for harsh environments and distinctive opto-electrical properties. Notable applications include deep-UV…
Tellurium (Te) is an intrinsically p-type doped narrow bandgap semiconductor with excellent electrical conductivity and low thermal conductivity. Bulk trigonal Te has been theoretically predicted and experimentally demonstrated to be an…
We discuss possible topological phase transitions in Ge-based thin films of Ge(Bi$_x$Sb$_{1-x}$)$_2$Te$_4$ as a function of layer thickness and Bi concentration $x$ using the first principles density functional theory framework. The bulk…
A normal metal - superconductor hybrid single-electron trap with tunable barrier is utilized as a tool for spectrum analysis at the extremely low signal levels, using only well filtered cryogenic microwave background as a photon source in…
Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the…
To examine the process of native corrosion of ultrathin (about 10 nm) copper films deposited on quartz glass substrates $(SiO_2)$ with and without a germanium sublayer, the time dependences of the microwave reflection coefficient $R$ and…
Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Germanium's potential to…
Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were…
We present evidence that electrical transport studies of epitaxial p-type GeMn thin films fabricated on high resistivity Ge substrates are severely influenced by parallel conduction through the substrate, related to the large intrinsic…
Dielectric measurements on insulating materials at cryogenic temperatures can be challenging, depending on the frequency and temperature ranges of interest. We present a technique to study the dielectric properties of bulk dielectrics at…
We harness non-volatile, amorphous-crystalline transitions in the chalcogenide phase-change medium germanium antimony telluride (GST) to realize optically-switchable, all-dielectric metamaterials. Nanostructured, subwavelength-thickness…